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IXFK32N50Q_04

型号：

IXFK32N50Q_04

描述：

HiPerFET功率MOSFET Q系列[ HiPerFET Power MOSFETs Q-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

576 K

下载PDF手册
HiPerFETTM  
Power MOSFETs  
Q-Class  
VDSS ID25 RDS(on)  
IXFK 32N50Q  
IXFX 32N50Q  
500 V 32 A 0.16 Ω  
500 V 32 A 0.16 Ω  
trr ≤ 250 ns  
N-ChannelEnhancementMode  
AvalancheRated, LowQg,Highdv/dt  
Symbol  
TestConditions  
Maximum Ratings  
PLUS 247TM  
(IXFX)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
500  
500  
V
V
VGS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
(TAB)  
G
D
ID25  
IDM  
T
= 25°C  
32  
A
A
TCC = 25°C,  
120  
pulse width limited by TJM  
TO-264AA(IXFK)  
IAR  
TC = 25°C  
TC = 25°C  
32  
A
EAR  
EAS  
45  
1500  
mJ  
mJ  
G
D
(TAB)  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
5
V/ns  
S
PD  
TC = 25°C  
416  
W
G = Gate  
D = Drain  
TJ  
-55 ... + 150  
150  
°C  
°C  
°C  
S = Source  
TAB = Drain  
TJM  
Tstg  
-55 ... + 150  
TL  
1.6 mm (0.063 in) from case for 10 s  
Mounting torque  
300  
°C  
Md  
1.13/10 Nm/lb.in.  
Features  
Weight  
TO-247  
TO-268  
6
4
g
g
z
IXYS advanced low Qg process  
z
Low gate charge and capacitances  
- easier to drive  
- faster switching  
z
z
z
International standard packages  
Low RDS (on)  
Unclamped Inductive Switching (UIS)  
rated  
Molding epoxies meet UL 94 V-0  
flammability classification  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
z
min.  
500  
typ.  
max.  
VDSS  
VGS = 0 V, ID = 250 uA  
VDS = VGS, ID = 4 mA  
V
V
VGS(th)  
2.5  
4.5  
Advantages  
IGSS  
IDSS  
VGS = 20 VDC, VDS = 0  
100 nA  
z
PLUS 247TM package for clip or spring  
mounting  
Space savings  
VDS = V  
T = 25°C  
TJJ = 125°C  
100 µA  
VGS = 0DVSS  
1
0.16  
mA  
z
RDS(on)  
V
= 10 V, ID = 0.5 ID25  
Ω
NGoSte 1  
z
High power density  
DS98604E(01/04)  
© 2004 IXYS All rights reserved  
IXFK 32N50Q  
IXFX 32N50Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
PLUS247TM Outline  
VDS = 10 V; ID = 0.5 • ID25  
Note 1  
18  
28  
S
Ciss  
Coss  
Crss  
3950  
640  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
210  
td(on)  
tr  
td(off)  
tf  
35  
42  
75  
20  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2 Ω (External),  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3-Source(Emitter)  
4 - Drain (Collector)  
Qg(on)  
Qgs  
150  
26  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Qgd  
85  
A
A12  
RthJC  
RthCK  
0.3 K/W  
K/W  
b
b12  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
b
0.15  
C
D
E
0.61  
0.80  
.024 .031  
.819 .840  
.620 .635  
20.80 21.34  
15.75 16.13  
e
5.45 BSC  
.215 BSC  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
L
19.81 20.32  
.780 .800  
.150 .170  
L1  
Q
R
3.81  
4.32  
Symbol  
TestConditions  
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IS  
VGS = 0 V  
32  
A
A
TO-264 AA Outline  
ISM  
Repetitive;  
pulse width limited by TJM  
128  
VSD  
IF = IS, VGS = 0 V, Note 1  
1.5  
V
trr  
250 ns  
IF = 25A, -di/dt = 100 A/µs, VR = 100 V  
QRM  
IRM  
0.75  
7.5  
µC  
A
Millimeter  
Dim.  
Inches  
Min.  
Max.  
Min.  
Max.  
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
A
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
A1  
.114  
A2  
.083  
b
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
b1  
b2  
c
D
E
e
0.53  
25.91  
19.81  
0.83  
26.16  
19.96  
.021  
1.020  
.780  
.033  
1.030  
.786  
5.46BSC  
.215BSC  
J
0.00  
0.25  
.000  
.010  
K
0.00  
0.25  
.000  
.010  
L
L1  
20.32  
2.29  
20.83  
2.59  
.800  
.090  
.820  
.102  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
6.04  
6.30  
.238  
.248  
T
1.57  
1.83  
.062  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505  
IXFK 32N50Q  
IXFX 32N50Q  
Figure 1. Output Characteristics at 25OC  
Figure 2. Output Characteristics at 125OC  
80  
70  
60  
50  
40  
30  
20  
10  
0
50  
VGS=10V  
TJ = 25OC  
TJ = 125OC  
VGS= 9V  
9V  
6V  
5V  
8V  
7V  
8V  
40  
30  
20  
10  
0
7V  
6V  
5V  
4V  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
VDS - Volts  
VDS - Volts  
Figure 4. RDS(on) normalized to 15A/25OC vs. TJ  
Figure 3. RDS(on) normalized to 15A/25OC vs. ID  
2.8  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
VGS = 10V  
VGS = 10V  
2.4  
Tj=1250 C  
ID = 32A  
2.0  
ID = 16A  
1.6  
Tj=250 C  
1.2  
0.8  
25  
50  
75  
100  
125  
150  
0
10  
20  
ID - Amperes  
Figure5.DrainCurrentvs.CaseTemperature  
30  
40  
50  
60  
TJ - Degrees C  
Figure6. AdmittanceCurves  
50  
40  
32  
24  
16  
8
40  
30  
20  
10  
0
TJ = 25oC  
TJ = 125oC  
0
-50 -25  
0
25 50 75 100 125 150  
2
3
4
5
6
TC - Degrees C  
VGS - Volts  
© 2004 IXYS All rights reserved  
IXFK 32N50Q  
IXFX 32N50Q  
Figure7. GateCharge  
Figure8.CapacitanceCurves  
14  
12  
10  
8
10000  
1000  
100  
F = 1MHz  
Vds=300V  
ID=16A  
IG=10mA  
Ciss  
Coss  
6
Crss  
4
2
0
0
50  
100  
150  
200  
250  
0
5
10  
15  
20  
25  
Gate Charge - nC  
VDS - Volts  
Figure 9. Forward Voltage Drop of the  
IntrinsicDiode  
100  
VGS= 0V  
80  
60  
40  
20  
0
TJ=125OC  
TJ=25OC  
0.4  
0.6  
0.8  
VSD - Volts  
1.0  
1.2  
Figure10.TransientThermalResistance  
0.40  
0.20  
0.10  
0.08  
0.06  
0.04  
0.02  
0.01  
10-3  
10-2  
10-1  
Pulse Width - Seconds  
100  
101  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505  
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