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IXFK360N10T

型号：

IXFK360N10T

描述：

GigaMOS海沟HiperFET功率MOSFET[ GigaMOS Trench HiperFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

181 K

下载PDF手册
Preliminary Technical Information  
GigaMOSTM Trench  
HiperFETTM  
Power MOSFET  
VDSS = 100V  
ID25 = 360A  
RDS(on) ≤ 2.9mΩ  
IXFK360N10T  
IXFX360N10T  
trr  
≤ 130ns  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
Tab  
D
S
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
PLUS247 (IXFX)  
ID25  
IL(RMS)  
IDM  
TC = 25°C (Chip Capability)  
External Lead Current Limit  
TC = 25°C, Pulse Width Limited by TJM  
360  
160  
900  
A
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
100  
3
A
J
G
Tab  
D
S
PD  
TC = 25°C  
1250  
20  
W
G = Gate  
D
= Drain  
dv/dt  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
V/ns  
S = Source  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
z International Standard Packages  
z High Current Handling Capability  
z Fast Intrinsic Diode  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
z Avalanche Rated  
20..120 /4.5..27  
z
Low RDS(on)  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 3mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
100  
V
V
z
2.5  
4.5  
Synchronous Recification  
z DC-DC Converters  
z Battery Chargers  
± 200 nA  
z Switch-Mode and Resonant-Mode  
Power Supplies  
z DC Choppers  
z AC Motor Drives  
IDSS  
25 μA  
2.5 mA  
TJ = 150°C  
RDS(on)  
VGS = 10V, ID = 100A, Notes 1 & 2  
2.9 mΩ  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100210A(02/11)  
IXFK360N10T  
IXFX360N10T  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
110  
180  
S
Ciss  
Coss  
Crss  
33  
3160  
400  
nF  
pF  
pF  
RGi  
td(on)  
tr  
Gate Input Resistance  
1.20  
47  
Ω
ns  
ns  
ns  
ns  
Terminals:  
1 - Gate  
Resistive Switching Times  
2 - Drain  
3 - Source  
4 - Drain  
100  
80  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 100A  
td(off)  
tf  
Millimeter  
Inches  
RG = 1Ω (External)  
Dim.  
Min.  
Max.  
Min.  
Max.  
160  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.044  
.094  
.114  
.202  
.114  
.083  
.056  
.106  
.122  
Qg(on)  
Qgs  
525  
145  
165  
nC  
nC  
nC  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
E
e
25.91 26.16  
19.81 19.96  
5.46 BSC  
RthJC  
RthCS  
0.12 °C/W  
°C/W  
.215 BSC  
0.05  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
Source-Drain Diode  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
PLUS 247TM Outline  
IS  
VGS = 0V  
360  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1440  
1.2  
trr  
IRM  
130 ns  
A
IF = 100A, VGS = 0V  
6.60  
0.33  
-di/dt = 100A/μs  
VR = 50V  
QRM  
μC  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Notes 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Includes lead resistance.  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFK360N10T  
IXFX360N10T  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
360  
300  
240  
180  
120  
60  
400  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 15V  
10V  
8V  
7V  
10V  
7V  
8V  
6V  
6V  
5.5V  
5V  
5.5V  
5V  
4V  
4V  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 180A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
360  
300  
240  
180  
120  
60  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 15V  
VGS = 10V  
10V  
8V  
7V  
I D = 360A  
I D = 180A  
6V  
5V  
4V  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. Normalized RDS(on) vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
180  
160  
140  
120  
100  
80  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
External Lead Current Limit  
TJ = 175ºC  
60  
TJ = 25ºC  
40  
20  
0
0
40  
80  
120  
160  
200  
240  
280  
320  
360  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFK360N10T  
IXFX360N10T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
200  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
150ºC  
25ºC  
60  
- 40ºC  
40  
20  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
0
0
1
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
320  
280  
240  
200  
160  
120  
80  
VDS = 50V  
I
I
D = 180A  
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
40  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1,000  
100  
10  
100.0  
10.0  
1.0  
R
Limit  
DS(on)  
25µs  
100µs  
C
iss  
External Lead Limit  
C
C
oss  
1ms  
T
T
= 175ºC  
= 25ºC  
J
10ms  
C
rss  
Single Pulse  
100ms  
= 1 MHz  
5
f
DC  
1
0.1  
10  
100  
0
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFK360N10T  
IXFX360N10T  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Drain Current  
280  
240  
200  
160  
120  
80  
320  
280  
240  
200  
160  
120  
80  
RG = 1Ω , VGS = 10V  
RG = 1ꢀ , VGS = 10V  
VDS = 50V  
VDS = 50V  
I D = 200A  
TJ = 125ºC  
TJ = 25ºC  
I D = 100A  
40  
40  
40  
60  
80  
100  
120  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
400  
350  
300  
250  
200  
150  
100  
120  
700  
600  
500  
400  
300  
200  
100  
0
210  
t f  
td(off) - - - -  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 50V  
180  
150  
120  
90  
RG = 1Ω, VGS = 10V  
DS = 50V  
110  
100  
90  
V
V
I D = 200A  
I D = 100A  
I D = 200A  
80  
I D = 100A  
60  
70  
30  
60  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
700  
600  
500  
400  
300  
200  
100  
650  
550  
450  
350  
250  
150  
50  
400  
350  
300  
250  
200  
150  
100  
50  
140  
130  
120  
110  
100  
90  
tf  
t
d(off) - - - -  
RG = 1ꢀ, VGS = 10V  
DS = 50V  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
V
VDS = 50V  
TJ = 125ºC  
TJ = 25ºC  
I D = 200A  
I D = 100A  
80  
70  
0
60  
1
2
3
4
5
6
7
8
9
10  
40  
60  
80  
100  
120  
ID - Amperes  
140  
160  
180  
200  
RG - Ohms  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFK360N10T  
IXFX360N10T  
Fig. 19. Maximum Transient Thermal Impedance  
.sadgsfgsf  
0.200  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF:F_360N10T(8V)9-23-09  
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