HiPerFETTM
Power MOSFETs
Q2-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
IXFK38N80Q2
IXFN38N80Q2
IXFX38N80Q2
VDSS = 800V
ID25 = 38A
RDS(on) ≤ 220mΩ
trr
≤ 250ns
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
800
800
V
V
TJ = 25°C to 150°C, RGS = 1MΩ
G
D
S
(TAB)
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
PLUS247 (IXFX)
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
38
150
A
A
IA
EAS
TC = 25°C
TC = 25°C
38
4
A
J
(TAB)
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
20
V/ns
W
miniBLOC, SOT-227 B (IXFN)
E153432
735
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
S
G
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300
260
°C
°C
VISOL
50/60 Hz, RMS
t = 1min
2500
3000
V~
V~
S
IISOL ≤ 1mA
t = 1s
D
Md
Mounting torque
Terminal connection torque (SOT-227B)
(TO-264)
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
FC
Mounting force
(PLUS247) 20..120 /4.5..27
N/lb.
G = Gate
D
=
Drain
Weight
TO-264
PLUS247
SOT-227B
10
6
30
g
g
g
S = Source
TAB = Drain
Features
• Double metal process for low gate
resistance
• International standard packages
• EpoxymeetUL94V-0, flammability
classification
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
• Avalanche energy and current rated
• Fast intrinsic Rectifier
• miniBLOCK package version with
Aluminum Nitrate isolation
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ± 30V, VDS = 0V
800
V
V
3.0
5.5
± 200 nA
Advantages
IDSS
VDS = VDSS
VGS = 0V
50
2
μA
mA
• Easy to mount
TJ = 125°C
• Space savings
• High power density
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
220 mΩ
DS99150B(5/08)
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