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IXFK44N50F_09

型号：

IXFK44N50F_09

描述：

HiPerRF功率MOSFET F级：兆赫切换[ HiPerRF Power MOSFETs F-Class: MegaHertz Switching ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

125 K

下载PDF手册
HiPerRFTM  
Power MOSFETs  
F-Class: MegaHertz Switching  
VDSS = 500V  
ID25 = 44A  
IXFK44N50F  
IXFX44N50F  
RDS(on) ≤ 120mΩ  
trr  
≤ 250ns  
Single MOSFET Die  
TO-264 (IXFK)  
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg, Low Intrinsic Rg  
High dV/dt, Low trr  
G
D
Tab  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
VDGR  
PLUS247 (IXFX)  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
TC = 25°C  
44  
184  
44  
A
A
A
Tab  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
mJ  
J
G = Gate  
S = Source  
D
= Drain  
2.5  
Tab = Drain  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
V/ns  
W
500  
Features  
TJ  
- 55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
z RF Capable MOSFETs  
z Double Metal Process for Low Gate  
Resistance  
- 55 ... +150  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Avalanche Rated  
TSOLD  
z Low Package Inductance  
z Fast Intrinsic Rectifier  
Md  
FC  
Mounting Torque  
Mounting Force  
(TO-264)  
(TO-247)  
1.13/10  
20..120/4.5..27  
Nm/lb.in.  
Nm/lb.  
Advantages  
Weight  
TO-264  
TO-247  
10  
6
g
g
z
Space Savings  
z
High Power Density  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z DC-DC Converters  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ.  
Max.  
z Switch-Mode and Resonant-Mode  
Power Supplies, > 500kHz Switching  
z DC Choppers  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 4mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
TJ = 125°C  
VGS = 10V, ID = 0.5 • ID25, Note 1  
V
V
5.5  
z 13.5 MHz Industrial Applications  
z Pulse Generation  
z Laser Drivers  
z RF Amplifiers  
± 100 nA  
100 μA  
IDSS  
2
mA  
RDS(on)  
120 mΩ  
DS98731C(10/09)  
© 2009 IXYS CORPORATION,All Rights Reserved  
IXFK44N50F  
IXFX44N50F  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
22  
32  
S
Ciss  
Coss  
Crss  
5500  
990  
pF  
pF  
pF  
330  
td(on)  
tr  
td(off)  
tf  
23  
18  
53  
8
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Millimeter  
Inches  
Dim.  
Qg(on)  
Qgs  
156  
37  
nC  
nC  
nC  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
b1  
b2  
c
D
E
e
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
90  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
RthJC  
RthCS  
0.26 °C/W  
°C/W  
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
0.15  
25.91 26.16  
19.81 19.96  
5.46 BSC  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
Source-Drain Diode  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
R
R1  
6.07  
8.38  
3.81  
1.78  
6.27  
8.69  
4.32  
2.29  
.239  
.330  
.150  
.070  
.247  
.342  
.170  
.090  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
44  
A
A
V
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
164  
1.5  
PLUS 247TM (IXFX) Outline  
trr  
QRM  
IRM  
250  
ns  
μC  
A
IF = 22A, -di/dt = 100A/μs  
1.1  
12.0  
VR = 100V, VGS = 0V  
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFK44N50F  
IXFX44N50F  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
140  
120  
100  
80  
VGS = 10V  
9V  
VGS = 10V  
8V  
9V  
60  
8V  
7V  
6V  
40  
7V  
6V  
20  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 22A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
VGS = 10V  
9V  
8V  
I D = 44A  
I D = 22A  
7V  
6V  
5V  
0
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 22A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100 110 120 130  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION,All Rights Reserved  
IXFK44N50F  
IXFX44N50F  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
140  
120  
100  
80  
16  
14  
12  
10  
8
VDS = 250V  
I D = 22A  
I G = 10mA  
60  
6
TJ = 125ºC  
40  
4
TJ = 25ºC  
2
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1,000.0  
100.0  
10.0  
1.0  
10,000  
1,000  
100  
RDS(on) Limit  
C
iss  
25µs  
C
oss  
rss  
100µs  
100ms  
1ms  
TJ = 150ºC  
DC  
10ms  
C
TC = 25ºC  
= 1 MHz  
5
f
Single Pulse  
0.1  
0
10  
15  
20  
25  
30  
35  
40  
10  
100  
VDS - Volts  
1,000  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFK44N50F  
IXFX44N50F  
Fig. 13. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2009 IXYS CORPORATION,All Rights Reserved  
IXYS REF: F_44N50F(8F)10-09-09  
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