IXFK52N60Q2
IXFX52N60Q2
Symbol
Test Conditions
Characteristic Values
TO-264 (IXFK) Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
30
40
S
Ciss
Coss
Crss
6800
1000
225
pF
pF
pF
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
23
13
ns
ns
ns
ns
56
8.5
Millimeter
Inches
Dim.
Min.
Max.
Min.
Max.
A
A1
A2
b
b1
b2
4.82
2.54
2.00
1.12
2.39
2.90
5.13
2.89
2.10
1.42
2.69
3.09
.190
.100
.079
.044
.094
.114
.202
.114
.083
.056
.106
.122
Qg(on)
Qgs
198
43
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
94
c
0.53
0.83
.021
1.020
.780
.033
1.030
.786
RthJC
RthCS
0.17 °C/W
°C/W
D
E
e
25.91 26.16
19.81 19.96
5.46 BSC
0.15
.215 BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
L1
20.32 20.83
.800
.090
.820
.102
Source-Drain Diode
Characteristic Values
2.29
2.59
P
3.17
3.66
.125
.144
TJ = 25°C unless otherwise specified)
Q
Q1
R
R1
6.07
8.38
6.27
8.69
.239
.330
.150
.070
.247
.342
.170
.090
Symbol
IS
Test Conditions
Min.
Typ.
Max.
3.81
1.78
4.32
2.29
VGS = 0V
52
A
A
V
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
ISM
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
208
1.5
PLUS247TM (IXFX) Outline
VSD
trr
QRM
IRM
250
ns
μC
A
IF = 25A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
1
10
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
