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IXFK66N50Q2

型号：

IXFK66N50Q2

描述：

HiPerFET功率MOSFET Q2级[ HiPerFET Power MOSFETs Q2-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

123 K

下载PDF手册
HiPerFETTM  
Power MOSFETs  
Q2-Class  
IXFK66N50Q2  
IXFX66N50Q2  
VDSS = 500V  
ID25 = 66A  
RDS(on) ≤ 80mΩ  
trr  
≤ 250ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low Qg  
Low intrinsic Rg, low trr  
TO-264 (IXFK)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
G
D
S
(TAB)  
ID25  
IDM  
TC = 25°C  
66  
264  
A
A
TC = 25°C, pulse width limited by TJM  
PLUS247 (IXFX)  
IA  
EAS  
TC = 25°C  
TC = 25°C  
66  
4
A
J
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
V/ns  
W
735  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
(TAB)  
G = Gate  
D
= Drain  
S = Source  
TAB = Drain  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
Md  
Mounting torque  
Mounting force  
(IXFK)  
(IXFX)  
1.13/10  
Nm/lb.in.  
N/lb.  
FC  
20..120 /4.5..27  
Features  
Weight  
TO-264  
PLUS247  
10  
6
g
g
• Double metal process for low gate  
resistance  
• International standard packages  
• EpoxymeetUL94V-0, flammability  
classification  
• Avalanche energy and current rated  
• Fast intrinsic Rectifier  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Advantages  
Min. Typ.  
Max.  
• Easy to mount  
• Space savings  
• High power density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
500  
V
V
3.0  
5.5  
VGS = ± 30V, VDS = 0V  
± 200  
nA  
IDSS  
VDS = VDSS  
VGS = 0V  
25  
3
μA  
mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
80  
mΩ  
DS98983B(5/08)  
© 2008 IXYS CORPORATION,All rights reserved  
IXFK66N50Q2  
IXFX66N50Q2  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXFK) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
30  
44  
S
Ciss  
Coss  
Crss  
9125  
1200  
318  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
32  
16  
60  
10  
ns  
ns  
ns  
ns  
Millimeter  
Inches  
Dim.  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
1.12  
2.39  
2.90  
5.13  
2.89  
2.10  
1.42  
2.69  
3.09  
.190  
.100  
.079  
.044  
.094  
.114  
.202  
.114  
.083  
.056  
.106  
.122  
Qg(on)  
Qgs  
200  
47  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
98  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
RthJC  
RthCS  
0.17  
°C/W  
°C/W  
D
E
e
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.15  
.215 BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
Source-Drain Diode  
Characteristic Values  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
TJ = 25°C unless otherwise specified)  
Q
Q1  
R
R1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.150  
.070  
.247  
.342  
.170  
.090  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
3.81  
1.78  
4.32  
2.29  
VGS = 0V  
66  
A
A
V
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
ISM  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
264  
1.5  
PLUS247TM (IXFX) Outline  
VSD  
trr  
QRM  
IRM  
250  
ns  
μC  
A
IF = 25A, -di/dt = 100A/μs  
VR = 100V, VGS = 0V  
1
10  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFK66N50Q2  
IXFX66N50Q2  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25 C  
@ 25 C  
°
°
70  
60  
50  
40  
30  
20  
10  
0
160  
140  
120  
100  
80  
V
GS  
= 10V  
8V  
V
GS  
= 10V  
8V  
7V  
6V  
7V  
5.5V  
60  
5V  
6V  
5V  
40  
4.5V  
20  
0
0
1
2
3
4
5
6
7
0
2
4
6
8
10  
12  
VD S - Volts  
14  
16  
18  
20  
VD S - Volts  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on) Normalized to 0.5 ID25 Value  
vs. Junction Temperature  
@ 125 C  
°
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 66A  
D
5V  
I
= 33A  
D
4.5V  
3.5V  
12  
0
2
4
6
8
10  
14  
-50 -25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to 0.5 ID25 Value  
vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
V
GS  
= 10V  
T = 125 C  
°
J
T = 25 C  
°
J
0
20  
40  
60  
80 100 120 140 160  
-50 -25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION,All rights reserved  
IXFK66N50Q2  
IXFX66N50Q2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T = - 40 C  
°
J
25 C  
°
T = 125 C  
°
125 C  
°
J
25 C  
°
- 40 C  
°
0
20  
40  
60  
80  
100  
120  
140  
3.0  
3.5  
4.0  
4.5 5.0  
VG S - Volts  
5.5  
6.0  
6.5  
7.0  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
180  
160  
140  
120  
100  
80  
V
= 250V  
DS  
I = 33A  
D
I
G
= 10mA  
60  
T = 125 C  
°
J
40  
T = 25 C  
°
J
20  
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3  
VS D - Volts  
0
20 40 60 80 100 120 140 160 180 200  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100000  
10000  
1000  
1000  
100  
10  
f
= 1MHz  
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
1ms  
C
oss  
10ms  
T =  
J
150ºC  
DC  
T =  
C
Single Pulse  
25ºC  
C
rss  
1
100  
10  
100  
VD S - Volts  
1000  
0
5
10  
15  
20  
VD S - Volts  
25  
30  
35  
40  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFK66N50Q2  
IXFX66N50Q2  
Fig. 13. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00  
0.1  
1
10  
100  
1000  
10000  
Pulse Width - milliseconds  
© 2008 IXYS CORPORATION,All rights reserved  
IXYS REF: F_66N50Q2(94)5-28-08-C  
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