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IXFL100N50P

型号：

IXFL100N50P

描述：

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

205 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFL 100N50P  
VDSS = 500 V  
ID25 = 70 A  
RDS(on) ≤ 52 mΩ  
ISOPLUS264TM  
trr  
≤ 200 ns  
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
ISOPLUS264  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 150° C  
500  
500  
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
S
ISOLATEDTAB  
D = Drain  
ID25  
IDM  
TC =25° C  
70  
A
A
G = Gate  
S = Source  
TC = 25° C, pulse width limited by TJM  
250  
IAR  
TC =25° C  
100  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
100  
5
mJ  
J
Features  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 2 Ω  
,
20  
V/ns  
l
International standard isolated  
package  
UL recognized package  
TC =25° C  
625  
W
l
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
l
Silicon chip on Direct-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
° C  
l
l
l
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic diode  
VISOL  
50/60 Hz, RMS  
t = 1 min  
2500  
3000  
V~  
V~  
IISOL ≤1 mA  
t = 1 s  
FC  
Mounting force  
28..150 / 6.4..30  
5
N/lb  
g
Weight  
Advantages  
l
Easy to mount  
Space savings  
High power density  
Symbol  
Test Conditions  
Characteristic Values  
l
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
l
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 8 mA  
VGS = 30 VDC, VDS = 0  
500  
V
V
3.0  
5.0  
200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
2000  
µA  
µA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = IT, Note 1  
52 mΩ  
DS99563E(01/06)  
© 2006 IXYS All rights reserved  
IXFL 100N50P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
ISOPLUS264 (IXFL) Outline  
VDS = 20 V; ID = IT, Note 1  
50  
80  
S
Ciss  
Coss  
Crss  
20  
1700  
140  
nF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
36  
29  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
RG = 1 Ω (External)  
110  
26  
Note: Bottomheatsinkmeets  
2500VrmsIsolationtotheotherpins.  
Qg(on)  
Qgs  
240  
96  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
Qgd  
78  
RthJC  
RthCS  
0.20 ° C/W  
° C/W  
0.13  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
Test Conditions  
IS  
VGS = 0 V  
100  
250  
1.5  
A
ISM  
VSD  
trr  
Repetitive  
A
V
Ref:IXYSCO0128R0  
IF = IS, VGS = 0 V, Note 1  
IF = 25A, -di/dt = 100 A/µs  
200  
ns  
QRM  
IRM  
VR = 100V  
0.6  
6.0  
µC  
A
Notes:  
1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %  
Test Current IT = 50 A  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFL 100N50P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
220  
200  
180  
160  
140  
120  
100  
80  
V
= 10V  
8V  
V
= 10V  
9V  
GS  
GS  
8V  
7V  
6V  
7V  
6V  
60  
40  
20  
5V  
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
0
2
4
6
8
10 12 14 16 18 20 22 24 26  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 50A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
GS  
8V  
7V  
V
= 10V  
GS  
I
= 100A  
D
6V  
I
= 50A  
D
5V  
0.7  
0.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
7
8
9
10  
11  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 50A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
3
2.8  
2.6  
2.4  
2.2  
2
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
T
J
= 125ºC  
1.8  
1.6  
1.4  
1.2  
1
T
J
= 25ºC  
0.8  
20  
40  
60  
80 100 120 140 160 180 200 220  
ID - Amperes  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXFL 100N50P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
160  
140  
120  
100  
80  
150  
135  
120  
105  
90  
T
J
= - 40ºC  
T
J
= 125ºC  
25ºC  
125ºC  
25ºC  
- 40ºC  
75  
60  
60  
45  
40  
30  
20  
15  
0
0
4
4.5  
5
5.5  
6
6.5  
7
7.5  
1.6  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
V
= 250V  
DS  
I
I
= 50A  
D
G
= 10mA  
T
J
= 125ºC  
T
= 25ºC  
J
0
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
25  
50  
75  
100 125 150 175 200 225 250  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1,000  
100  
10  
f = 1 MHz  
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
1ms  
C
C
oss  
rss  
10ms  
DC  
T
T
= 150ºC  
= 25ºC  
J
C
1
0
5
10  
15  
20  
25  
30  
35  
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFL 100N50P  
Fig. 13. Maximum Transient Thermal Resistance  
1.000  
0.100  
0.010  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2006 IXYS All rights reserved  
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