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IXFL30N120P

型号：

IXFL30N120P

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

109 K

下载PDF手册
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 1200V  
ID25 = 18A  
RDS(on) ≤ 380mΩ  
≤ 300ns  
IXFL30N120P  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
trr  
ISOPLUS i5-PakTM (HV)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1200  
1200  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
ID25  
IDM  
TC = 25°C  
18  
80  
A
A
G
S
TC = 25°C, pulse width limited by TJM  
IA  
TC = 25°C  
TC = 25°C  
15  
A
J
D
EAS  
1.5  
G = Gate  
D = Drain  
S = Source  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
15  
V/ns  
W
357  
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z UL recognized package  
z Silicon chip on Direct-Copper-Bond  
substrate  
TJM  
Tstg  
-55 ... +150  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
TL  
Maximum lead temperature for soldering  
Plastic body for 10s  
300  
260  
°C  
°C  
V~  
V~  
TSOLD  
VISOL  
z Unclamped Inductive Switching (UIS)  
rated  
50/60 Hz, RMS, 1 minute  
2500  
3000  
z Low package inductance  
- easy to drive and to protect  
Fast intrinsic diode  
IISOL ≤ 1mA  
t = 1s  
z
FC  
Mounting force  
40..120/4.5..27  
8
N/lb.  
Advantages  
Weight  
g
z
Easy to mount  
Space savings  
High power density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
Applications:  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
1200  
3.5  
V
V
z High Voltage Switched-mode and  
resonant-mode power supplies  
z High Voltage Pulse Power Applications  
z High Voltage Discharge circuits in  
Lasers Pulsers, Spark Igniters, RF  
Generators  
6.5  
± 200 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
50 μA  
5 mA  
TJ = 125°C  
z High Voltage DC-DC converters  
z High Voltage DC-AC inverters  
RDS(on)  
VGS = 10V, ID = 15A, Note 1  
380 mΩ  
DS99890A (04/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFL30N120P  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS i5-PakTM HV (IXFL) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 15A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate input resistance  
13  
22  
S
Ciss  
Coss  
Crss  
19  
960  
25  
nF  
pF  
pF  
RGi  
1.70  
Ω
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 15A  
RG = 1Ω (External)  
57  
60  
95  
56  
ns  
ns  
ns  
ns  
Note: Bottom heatsink meets 2500 Vrms  
isolation to the other pins.  
Qg(on)  
Qgs  
310  
104  
137  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 15A  
Qgd  
RthJC  
RthCS  
0.35 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
30  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
120  
1.5  
trr  
300 ns  
IF = 15A, -di/dt = 100A/μs  
QRM  
IRM  
1.6  
μC  
VR = 100V, VGS = 0V  
14  
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFL30N120P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
30  
27  
24  
21  
18  
15  
12  
9
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
9V  
VGS = 10V  
8V  
8V  
7V  
6V  
7V  
6V  
6
3
0
0
0
1
2
3
4
5
6
7
8
9
10  
22  
70  
0
5
10  
15  
20  
25  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 15A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
30  
27  
24  
21  
18  
15  
12  
9
VGS = 10V  
8V  
VGS = 10V  
7V  
I D = 30A  
I D = 15A  
6V  
5V  
6
3
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 15A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.6  
2.4  
2.2  
2
20  
18  
16  
14  
12  
10  
8
VGS = 10V  
TJ = 125ºC  
1.8  
1.6  
1.4  
1.2  
1
6
4
TJ = 25ºC  
2
0.8  
0
0
10  
20  
30  
40  
50  
60  
-50  
-25  
0
25  
50  
75  
100  
125  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXFL30N120P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
30  
25  
20  
15  
10  
5
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30  
ID - Amperes  
4.5  
5
5.5  
6
6.5  
7
7.5  
8
1.3  
40  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 600V  
I D = 15A  
I
G = 10mA  
TJ = 125ºC  
6
TJ = 25ºC  
4
2
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
0.001  
f = 1 MHz  
C
iss  
C
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_30N120P (97) 4-01-08-C  
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