IXFL34N100
Symbol
Test Conditions
Characteristic Values
ISOPLUS264TM (IXFL) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 15V, ID = 17A, Note 1
18
40
S
Ciss
Coss
Crss
9200
1200
300
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
41
65
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 17A
RG = 1Ω (External)
110
30
Note: Bottom heatsink meets
Qg(on)
Qgs
380
65
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 17A
Qgd
185
RthJC
RthCS
0.225 °C/W
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
34
A
A
V
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
136
1.3
Ref: IXYS CO 0128
180
330
300
ns
ns
IF = IS, VGS = 0V
-di/dt = 100A/μs
VR = 100V
TJ = 125°C
QRM
IRM
2
8
μC
A
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
Please see IXFN36N100 data sheet for characteristic curves.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
