IXFL36N110P
Symbol
Test Conditions
Characteristic Values
ISOPLUS i5-PakTM HV (IXFL) Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 18A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate input resistance
20
32
S
Ciss
Coss
Crss
23
1240
110
nF
pF
pF
Tab
RGi
0.85
Ω
td(on)
tr
td(off)
tf
60
54
94
45
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 18A
RG = 1Ω (External)
Note: Bottom Tab meets 2500 Vrms
isolation to the other pins.
Qg(on)
Qgs
350
117
157
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 18A
Qgd
RthJC
RthCS
0.24 °C/W
°C/W
0.15
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0V
36
144
1.5
A
A
V
ISM
VSD
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
trr
300 ns
IF = 20A, -di/dt = 100A/μs
QRM
IRM
2.3
μC
VR = 100V, VGS = 0V
16
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
