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IXFL44N100P

型号：

IXFL44N100P

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

105 K

下载PDF手册
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 1000V  
ID25 = 22A  
RDS(on) ≤ 240mΩ  
≤ 300ns  
IXFL44N100P  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
trr  
ISOPLUS i5-PakTM (HV)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1000  
1000  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
ID25  
IDM  
TC = 25°C  
22  
A
A
G
S
TC = 25°C, pulse width limited by TJM  
110  
IAR  
TC = 25°C  
TC = 25°C  
22  
2
A
J
D
EAS  
G = Gate  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
15  
V/ns  
W
S = Source  
D = Drain  
357  
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
• Silicon chip on Direct-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
-55 ... +150  
TL  
Maximum lead temperature for soldering  
Plastic body for 10s  
300  
260  
°C  
°C  
V~  
V~  
• L- o2w50d0rVaienletocttraicbacl aispoalactitioannce(<30pF)  
• Rugged polysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
TSOLD  
VISOL  
50/60 Hz, RMS, 1 minute  
2500  
3000  
• Fraatsetdintrinsic Rectifier  
IISOL ≤ 1mA  
t = 1s  
FC  
Mounting force  
40..120/4.5..27  
8
N/lb.  
Applications  
Weight  
g
• Switched-mode and resonant-mode  
power supplies  
• DC-DC converters  
Symbol  
Test Conditions  
Characteristic Values  
• Laser Drivers  
• AC and DC motor controls  
• Robotics and servo controls  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
1000  
3.5  
V
V
6.5  
Advantages  
• Easy assembly  
• Space savings  
• High power density  
± 200 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
50 μA  
3 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 22A, Note 1  
240 mΩ  
DS99893A(4/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFL44N100P  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS i5-PakTM HV (IXFL) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 22A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate input resistance  
20  
35  
S
Ciss  
Coss  
Crss  
19  
1060  
41  
nF  
pF  
pF  
RGi  
1.70  
Ω
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 22A  
RG = 1Ω (External)  
60  
68  
90  
54  
ns  
ns  
ns  
ns  
Note: Bottom heatsink meets 2500 Vrms  
isolation to the other pins.  
Qg(on)  
Qgs  
305  
104  
125  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 22A  
Qgd  
RthJC  
RthCS  
0.35 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
44  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
176  
1.5  
trr  
300 ns  
IF = 22A, -di/dt = 100A/μs  
QRM  
IRM  
2.5  
μC  
VR = 100V, VGS = 0V  
17  
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFL44N100P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
9V  
VGS = 10V  
9V  
8V  
8V  
7V  
7V  
0
0
0
0
1
2
3
4
5
6
7
8
9
10  
11  
0
5
10  
15  
20  
25  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 22A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
8V  
VGS = 10V  
I D = 44A  
I D = 22A  
7V  
6V  
0
2
4
6
8
10 12 14 16 18 20 22 24  
VDS - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 22A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
24  
22  
20  
18  
16  
14  
12  
10  
8
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
6
4
2
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
-50  
-25  
0
25  
50  
75  
100  
125  
TC - Degrees Centigrade  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXFL44N100P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
450  
10  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
1.1  
35  
9
1.2  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
130  
120  
110  
100  
90  
VDS = 500V  
I
I
D = 22A  
G = 10mA  
80  
70  
60  
50  
6
TJ = 125ºC  
40  
4
30  
TJ = 25ºC  
20  
2
10  
0
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0
50  
100  
150  
200  
250  
300  
350  
400  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
0.001  
f = 1 MHz  
C
iss  
C
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_44N100P(97)4-01-08-D  
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