IXFL 44N80
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS264OUTLINE
VDS = 15 V; ID = IT
Note 2
32
50
S
Ciss
Coss
Crss
10000
1300
330
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
35
48
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RG = 1 Ω (External)
100
24
Qg(on)
Qgs
380
70
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Qgd
170
RthJC
RthCK
0.225 K/W
K/W
0.05
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
IS
VGS = 0 V
44
A
A
ISM
Repetitive;
pulse width limited by TJM
176
VSD
trr
IF = IS, VGS = 0 V, Note 1
1.3
V
IF = IS,-di/dt = 100 A/µs, VR = 100 V
250 ns
QRM
IRM
1.2
8
µC
A
Note: 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. Test current IT = 22A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
