IXFL80N50Q2
Symbol
Test Conditions
Characteristic Values
ISOPLUS264TM (IXFL) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 40A, Note 1
50
65
S
Ciss
Coss
Crss
12.8
1640
440
nF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
29
25
60
11
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 40A
RG = 1Ω (External)
Note: Bottom heatsink meets
Qg(on)
Qgs
250
80
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 40A
Qgd
120
RthJC
RthCS
0.33 °C/W
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0V
80
A
A
Ref: IXYS CO 0128
ISM
VSD
trr
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
320
1.5
V
250
ns
IF = 25A, VGS = 0V
-di/dt = 100 A/μs
VR = 100 V
QRM
IRM
1.4
12
μC
A
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
