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IXFN100N50Q3

型号：

IXFN100N50Q3

描述：

HiperFET功率MOSFET Q3级[ HiperFET Power MOSFET Q3-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

124 K

下载PDF手册
Advance Technical Information  
HiperFETTM  
Power MOSFET  
Q3-Class  
VDSS = 500V  
ID25 = 82A  
RDS(on) ≤ 49mΩ  
IXFN100N50Q3  
trr  
≤ 250ns  
N-Channel Enhancement Mode  
Fast Intrinsic Rectifier  
miniBLOC  
E153432  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
VDGR  
S
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
D
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
82  
A
A
G = Gate  
S = Source  
D = Drain  
300  
IA  
TC = 25°C  
TC = 25°C  
100  
5
A
J
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
(Gate Return) Terminal.  
EAS  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
50  
V/ns  
W
960  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
International Standard Package  
Low Intrinsic Gate Resistance  
miniBLOC with Aluminum Nitride  
z
z
VISOL  
50/60 Hz, RMS, t = 1minute  
2500  
3000  
V~  
V~  
IISOL ≤ 1mA,  
t = 1s  
Isolation  
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
z
Md  
Mounting Torque for Base Plate  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
z
z
Weight  
30  
g
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
500  
3.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
z
6.5  
z
±200 nA  
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
z
IDSS  
50 μA  
2.5 mA  
z
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 50A, Note 1  
49 mΩ  
DS100308(03/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFN100N50Q3  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 50A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
40  
65  
S
Ciss  
Coss  
Crss  
13.8  
1690  
177  
nF  
pF  
pF  
RGi  
0.12  
40  
Ω
td(on)  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A  
RG = 0.5Ω (External)  
tr  
20  
50  
ns  
ns  
td(off)  
(M4 screws (4x) supplied)  
tf  
15  
ns  
Qg(on)  
Qgs  
255  
110  
115  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A  
Qgd  
RthJC  
RthCS  
0.13 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
100  
400  
1.5  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
trr  
QRM  
IRM  
250 ns  
IF = 50A, -di/dt = 200A/μs  
3.5  
30.0  
μC  
A
VR = 100V, VGS = 0V  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN100N50Q3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
VGS = 10V  
9V  
200  
160  
120  
80  
9V  
8V  
8V  
7V  
6V  
40  
7V  
6V  
0
0
5
10  
15  
20  
25  
30  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 50A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
VGS = 10V  
8V  
7V  
I D = 100A  
I D = 50A  
6V  
5V  
0
1
2
3
4
5
6
7
8
9
10  
11  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 50A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
ID - Amperes  
TC - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFN100N50Q3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
60  
- 40ºC  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
16  
14  
12  
10  
8
300  
250  
200  
150  
100  
50  
VDS = 250V  
I D = 50A  
I G = 10mA  
6
TJ = 125ºC  
TJ = 25ºC  
4
2
0
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6  
VSD - Volts  
0
50  
100  
150  
200  
250  
300  
350  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
100000  
10000  
1000  
= 1 MHz  
f
RDS(on) Limit  
250µs  
C
iss  
C
oss  
1ms  
1
TJ = 150ºC  
TC = 25ºC  
C
rss  
Single Pulse  
100  
0.1  
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFN100N50Q3  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.0001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_100N50Q3(Q9)02-24-11  
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