请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXFN140N20P

型号：

IXFN140N20P

描述：

PolarHT HiPerFET功率MOSFET[ PolarHT HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

92 K

下载PDF手册
PolarHTTM HiPerFET  
Power MOSFET  
VDSS = 200 V  
ID25 = 115 A  
RDS(on) ≤ 18 mΩ  
IXFN 140N20P  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
trr  
≤ 150 ns  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 175°C  
200  
200  
V
miniBLOC, SOT-227 B (IXFN)  
E153432  
TJ = 25°C to 175°C; RGS = 1 MΩ  
V
VGS  
Continuous  
Transient  
20  
30  
V
V
S
VGSM  
G
ID25  
TC = 25°C  
115  
100  
280  
A
A
A
ID(RMS)  
IDM  
External lead current limit  
TC = 25°C, pulse width limited by TJM  
S
IAR  
TC = 25°C  
60  
A
D
EAR  
EAS  
TC = 25°C  
TC = 25°C  
100  
4
mJ  
J
G = Gate  
S = Source  
D = Drain  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 4 Ω  
,
10  
V/ns  
Either source tab S can be used forsource  
current or Kelvin gate return.  
TC = 25°C  
680  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
1.6 mm (0.062 in.) from case for 10 s  
50/60 Hz, RMS, 1 minute  
300  
°C  
z International standard package  
z Unclamped Inductive Switching (UIS)  
rated  
VISOL  
2500  
V~  
Md  
Terminal torque  
Mounting torque  
1.13/10 Nm/lb.in.  
1.13/10 Nm/lb.in.  
z Low package inductance  
- easy to drive and to protect  
z
Weight  
30  
g
Fast intrinsic diode  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
Easy to mount  
Space savings  
High power density  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 4 mA  
VGS = 20 VDC, VDS = 0  
200  
V
V
z
2.5  
5.0  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
μA  
μA  
TJ = 150°C  
RDS(on)  
VGS = 10 V, ID = 70 A  
VGS = 15 V, ID = 140A  
18 mΩ  
mΩ  
14  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
DS99245E(03/06)  
© 2006 IXYS All rights reserved  
IXFN 140N20P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
SOT-227B miniBLOC  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 70 A  
50  
84  
S
Ciss  
Coss  
Crss  
7500  
1630  
280  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
30  
35  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 70 A  
RG = 3.3 Ω (External)  
150  
90  
Qg(on)  
Qgs  
240  
50  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 70 A  
Qgd  
110  
RthJC  
RthCS  
0.22K/W  
K/W  
0.05  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0 V  
Repetitive  
140  
A
A
V
ISM  
280  
1.5  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
trr  
IF = 25 A  
200 ns  
QRM  
IRM  
-di/dt = 100 A/μs  
VR = 100 V  
0.6  
6
μC  
A
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFN 140N20P  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25  
º
C
@ 25 C  
º
140  
120  
100  
80  
300  
270  
240  
210  
180  
150  
120  
90  
VGS = 10V  
V
= 10V  
GS  
9V  
8V  
9V  
8V  
7V  
60  
7V  
6V  
40  
6V  
5V  
60  
20  
30  
0
0
0
0
0
0.5  
1
1.5  
2
2.5  
0
1
2
3
4
5
6
7
8
9
10  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 150  
Fig. 4. RDS(on Norm alized to ID = 70A  
)
º
C
Value vs. Junction Tem perature  
140  
120  
100  
80  
VGS = 10V  
3
2.5  
2
VGS = 10V  
9V  
8V  
ID = 140A  
7V  
ID = 70A  
60  
1.5  
1
6V  
5V  
40  
20  
0
0.5  
1
2
3
4
5
6
-50 -25  
0
25  
50  
75 100 125 150 175  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 6. Drain Current vs. Case  
Tem perature  
Fig. 5. RDS(on) Norm alized to  
ID = 70A Value vs. Drain Current  
80  
70  
60  
50  
40  
30  
20  
10  
0
4
3.5  
3
= 175ºC  
TJ  
2.5  
2
VGS = 10V  
V
= 15V  
GS  
1.5  
1
º
TJ = 25 C  
0.5  
-50 -25  
0
25  
50  
75  
100 125 150 175  
50  
100  
150  
200  
250  
300  
TC - Degrees Centigrade  
I D - Amperes  
© 2006 IXYS All rights reserved  
IXFN 140N20P  
Fig. 8. Transconductance  
Fig. 7. Input Adm ittance  
225  
200  
175  
150  
125  
100  
75  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
= -40ºC  
25ºC  
150ºC  
TJ  
= 150ºC  
25ºC  
-40ºC  
TJ  
50  
25  
0
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
0
40  
80  
120  
160  
200  
240  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 100V  
ID = 70A  
I
G = 10mA  
= 150ºC  
TJ  
= 25ºC  
TJ  
0
0
25 50 75 100 125 150 175 200 225 250  
0.4  
0.6  
0.8  
1
1.2  
1.4  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forw ard-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1000  
100  
10  
f = 1MHz  
25µs  
RDS(on) Limit  
C
iss  
100µs  
1ms  
C
oss  
10ms  
C
rss  
DC  
= 175ºC  
TJ  
= 25ºC  
TC  
1
0
5
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
1000  
VDS - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFN 140N20P  
Fig. 13. Maxim um Transient Therm al Resistance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2006 IXYS All rights reserved  
IXYS REF: T_140N20P (88) 01-23-06-B.xls  
厂商 型号 描述 页数 下载

ILSI

 		IXF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A20AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.174092s