PolarTM HiPerFET
Power MOSFET
VDSS = 100 V
ID25 = 200 A
RDS(on) ≤ 7.5 mΩ
IXFN 200N10P
N-Channel Enhancement Mode
Fast Intrinsic Diode
trr
≤ 150 ns
Avalanche Rated
miniBLOC, SOT-227 B (IXFN)
E153432
Symbol
Test Conditions
Maximum Ratings
S
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
100
100
V
V
G
VGS
VGSM
Continuous
Transient
20
30
V
V
S
ID25
TC = 25°C
200
100
400
A
A
A
D
ID(RMS)
IDM
External lead current limit
TC = 25°C, pulse width limited by TJM
G = Gate
D = Drain
S = Source
IAR
TC = 25°C
60
A
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
EAR
EAS
TC = 25°C
TC = 25°C
100
4
mJ
J
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 4 Ω
,
10
V/ns
Features
TC = 25°C
680
W
• International standard package
• Encapsulating epoxy meets
UL94V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +150
°C
°C
°C
VISOL
50/60 Hz, RMS,
T = 1 min
T = 1 s
2500
3000
V~
V~
IISOL ≤ 1 mA,
Md
Mounting torque, Terminal connection torque
1.5/13
30
lb.in.
g
Weight
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 8 mA
VGS = 20 V, VDS = 0
VDS = VDSS, VGS = 0 V
100
V
V
3.0
5.0
100
nA
IDSS
25
500
μA
μA
2.5 mA
Advantages
TJ = 150°C
TJ = 175°C
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 ID25
VGS = 15 V, ID = 400A
7.5 mΩ
mΩ
5.5
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
DS99239E(03/06)
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