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IXFN20N120

型号：

IXFN20N120

描述：

HiPerFET功率MOSFET[ HiPerFET Power MOSFETs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

568 K

下载PDF手册
Advanced Technical Information  
HiPerFETTM  
Power MOSFETs  
IXFN 20N120  
VDSS = 1200 V  
ID25 20 A  
RDS(on) = 0.75 Ω  
trr ≤ 300 ns  
=
N-Channel Enhancement Mode  
AvalancheRated, Highdv/dt, Lowtrr  
D
G
S
S
Symbol  
TestConditions  
Maximum Ratings  
miniBLOC,SOT-227B(IXFN)  
E153432  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
1200  
1200  
V
V
S
G
VGS  
Continuous  
Transient  
30  
40  
V
V
VGSM  
S
ID25  
TC = 25°C, Chip capability  
20  
A
D
IDM  
IAR  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
80  
10  
A
A
G = Gate  
D = Drain  
TAB = Drain  
EAR  
EAS  
T
= 25°C  
40  
2
mJ  
J
TCC = 25°C  
S = Source  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ≤ 150°C, RG = 2 Ω  
,
5
V/ns  
Features  
PD  
TC= 25°C  
780  
W
• International standard package  
TJ  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
• miniBLOC, withAluminiumnitride  
TJM  
Tstg  
isolation  
• Low RDS (on) HDMOSTM process  
• Ruggedpolysilicongatecellstructure  
VISOL  
Md  
50/60 Hz, RMS  
ISOL ≤ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
I
• UnclampedInductiveSwitching(UIS)  
rated  
Mounting torque  
Terminal connection torque  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
• Lowpackageinductance  
• FastintrinsicRectifier  
Weight  
30  
g
Applications  
• DC-DC converters  
• Batterychargers  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• Switched-modeandresonant-mode  
power supplies  
VDSS  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 8 mA  
1200  
2.5  
V
V
• DC choppers  
• Temperatureandlightingcontrols  
VGH(th)  
4.5  
IGSS  
IDSS  
VGS = 30 VDC, VDS = 0  
100 nA  
VDS = VDSS  
VGS = 0 V  
T = 25°C  
TJJ = 125°C  
100 µA  
2
mA  
Advantages  
• Easy to mount  
• Space savings  
• High power density  
RDS(on)  
V
= 10 V, ID = 0.5 • I  
0.75  
Ω
PuGSlse test, t ≤ 300 µs,D25  
duty cycle d ≤ 2 %  
© 2003 IXYS All rights reserved  
DS99116(11/03)  
IXFN 20N120  
Symbol  
gfs  
TestConditions  
Characteristic Values  
miniBLOC, SOT-227 B  
(TJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
VDS = 20 V; ID = 0.5 • ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
15  
27  
S
Ciss  
Coss  
Crss  
7400  
560  
100  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
25  
45  
75  
20  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1 Ω (External),  
M4 screws (4x) supplied  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
1.255  
0.323  
0.169  
0.169  
0.169  
0.595  
1.193  
1.505  
0.481  
0.378  
0.033  
0.506  
A
B
31.50  
7.80  
31.88  
8.20  
1.240  
0.307  
Qg(on)  
Qgs  
Qgd  
160  
35  
60  
nC  
nC  
nC  
C
D
4.09  
4.09  
4.29  
4.29  
0.161  
0.161  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
E
F
4.09  
14.91  
4.29  
15.11  
0.161  
0.587  
G
H
30.12  
38.00  
30.30  
38.23  
1.186  
1.496  
RthJC  
RthCK  
0.16 K/W  
K/W  
J
K
11.68  
8.92  
12.22  
9.60  
0.460  
0.351  
0.05  
L
M
0.76  
12.60  
0.84  
12.85  
0.030  
0.496  
N
O
25.15  
1.98  
25.42  
2.13  
0.990  
0.078  
1.001  
0.084  
P
Q
4.95  
26.54  
5.97  
26.90  
0.195  
1.045  
0.235  
1.059  
R
S
3.94  
4.72  
4.42  
4.85  
0.155  
0.186  
0.174  
0.191  
T
U
24.59  
-0.05  
25.07  
0.1  
0.968  
-0.002  
0.987  
0.004  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
IS  
TestConditions  
VGS = 0 V  
20  
A
A
V
ISM  
Repetitive;  
80  
pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
1.5  
trr  
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
300 ns  
QRM  
IRM  
1.4  
8
µC  
A
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505  
IXFN 20N120  
Fig. 1. Output Characteristics  
@ 25 deg. C  
Fig. 2. Output Characteristics  
@ 125 Deg. C  
35  
30  
25  
20  
15  
10  
5
22  
20  
18  
16  
14  
12  
10  
8
VGS = 10V  
5V  
VGS = 10V  
6V  
5V  
6
4V  
4
4V  
25  
2
0
0
0
0
3
5
10  
15  
20  
25  
30  
35  
40  
35  
5.5  
0
5
10  
15  
20  
30  
VD S - Volts  
VD S - Volts  
Fig. 3. RDS(on) Normalized to ID25 Value vs.  
Junction Temperature  
Fig. 4. RDS(on) Normalized to ID25  
Value vs. ID  
2.8  
2.6  
2.4  
2.2  
2
2.6  
2.4  
2.2  
2
VGS = 10V  
VGS = 10V  
TJ = 125ºC  
ID = 20A  
1.8  
1.6  
1.4  
1.2  
1
1.8  
1.6  
1.4  
1.2  
1
ID = 10A  
TJ = 25ºC  
0.8  
0.6  
0.4  
0.8  
-50  
-25  
0
25  
50  
75  
100 125 150  
5
10  
15  
20  
25  
30  
I D - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Drain Current vs. Case  
Temperature  
Fig. 6. Input Admittance  
24  
22  
20  
18  
16  
14  
12  
10  
8
30  
25  
20  
15  
10  
5
TJ = 125ºC  
25ºC  
-40ºC  
6
4
2
0
0
-50  
-25  
0
25  
50  
75  
100 125 150  
3.5  
4
4.5  
5
TC - Degrees Centigrade  
VG S - Volts  
© 2003 IXYS All rights reserved  
IXFN 20N120  
Fig. 8. Source Current vs.  
Source-To-Drain Voltage  
Fig. 7. Transconductance  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
TJ = -40ºC  
25ºC  
125ºC  
TJ = 125ºC  
TJ = 25ºC  
0
0
5
10  
15  
20  
25  
30  
35  
0.4  
0.6  
0.8  
1
1.2  
1.4  
I D - Amperes  
VS D - Volts  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
10  
9
8
7
6
5
4
3
2
1
0
10000  
1000  
100  
VDS = 600V  
ID = 10A  
IG = 10mA  
C
iss  
C
C
oss  
rss  
f = 1MHz  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0
20  
40  
60  
80  
100 120 140 160  
Q G - nanoCoulombs  
VD S - Volts  
Fig. 11. Maximum Transient Thermal Resistance  
0.18  
0.16  
0.14  
0.12  
0.1  
0.08  
0.06  
0.04  
0.02  
0
1
10  
100  
1000  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505  
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