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IXFN210N20P

型号：

IXFN210N20P

描述：

极地HiPerFET[ Polar HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

123 K

下载PDF手册
PolarTM HiPerFETTM  
Power MOSFET  
VDSS = 200V  
ID25 = 188A  
IXFN210N20P  
RDS(on) ≤ 10.5mΩ  
trr  
≤ 200ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
miniBLOC  
E153432  
S
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
200  
200  
V
V
S
VGSS  
VGSM  
Continuous  
Transient  
±20  
± 30  
V
V
D
ID25  
IDM  
TC = 25°C  
188  
600  
A
A
G = Gate  
S = Source  
D = Drain  
TC = 25°C, Pulse Width Limited by TJM  
IA  
EAS  
TC = 25°C  
TC = 25°C  
105  
4
A
J
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
(Gate Return) Terminal.  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
TC = 25°C  
20  
V/ns  
W
1070  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
z International Standard Package  
z miniBLOC, with Aluminium Nitride  
Isolation  
TL  
1.6mm (0.062 in.) from Case for 10s  
300  
°C  
VISOL  
50/60 Hz, RMS  
t = 1min  
2500  
3000  
V~  
V~  
z Low Package Inductance  
Avalanche Rated  
IISOL ≤ 1mA  
t = 1s  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
z Low RDS(ON) and QG  
z Fast Intrinsic Diode  
Weight  
30  
g
Advantages  
z Easy to Mount  
z Space Savings  
z High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
200  
V
Applications  
2.5  
4.5  
V
z DC-DC Coverters  
z Battery Chargers  
±200  
nA  
z Switch-Mode and Resonant-Mode  
Power Supplies  
IDSS  
25  
2
μA  
mA  
TJ = 150°C  
z DC Choppers  
z AC and DC Motor Drives  
z Uninterrupted Power Supplies  
z High Speed Power Switching  
Applications  
RDS(on)  
VGS = 10V, ID = 105A, Note 1  
10.5 mΩ  
DS100019A(05/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFN210N20P  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
60  
103  
S
Ciss  
Coss  
Crss  
td(on)  
tr  
18.6  
3270  
80  
nF  
pF  
pF  
ns  
ns  
ns  
ns  
VGS = 0V, VDS = 25V, f = 1MHz  
43  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 105A  
RG = 1Ω (External)  
30  
td(off)  
tf  
70  
18  
Qg(on)  
Qgs  
255  
94  
nC  
nC  
nC  
(M4 screws (4x) supplied)  
VGS = 10V, VDS = 0.5 • VDSS, ID = 105A  
Qgd  
83  
RthJC  
RthCS  
0.14 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
210  
800  
1.3  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 105A, VGS = 0V, Note 1  
trr  
QRM  
IRM  
200  
ns  
μC  
A
IF = 105A, -di/dt = 150A/μs  
1.34  
18  
VR = 100V  
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN210N20P  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
220  
200  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 15V  
10V  
8V  
10V  
8V  
7V  
7V  
6V  
5V  
6V  
5V  
60  
40  
20  
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
0
1
2
3
4
5
6
7
8
9
10  
175  
175  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 105A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
220  
200  
180  
160  
140  
120  
100  
80  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 15V  
VGS = 10V  
10V  
8V  
7V  
6V  
I D = 210A  
I D = 105A  
60  
40  
5V  
20  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 105A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
200  
160  
120  
80  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
TJ = 175ºC  
VGS = 10V  
15V  
- - - -  
TJ = 25ºC  
40  
0
0
50  
100  
150  
200  
250  
300  
350  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFN210N20P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
25ºC  
60  
60  
- 40ºC  
40  
40  
20  
20  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 100V  
I D = 105A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
0
20  
40  
60  
80 100 120 140 160 180 200 220 240 260  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1000  
f
= 1 MHz  
RDS(on) Limit  
25µs  
C
isss  
100µs  
100  
10  
1
1ms  
C
oss  
TJ = 175ºC  
C = 25ºC  
Single Pulse  
10ms  
T
C
rss  
100ms  
DC  
10  
0.1  
0
5
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFN210N20P  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_210N20P(9S) 5-26-10-A  
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