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IXFN21N100Q

型号：

IXFN21N100Q

描述：

HiPerFET TM功率MOSFET Q系列[ HiPerFET TM Power MOSFETs Q-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

132 K

下载PDF手册
HiPerFETTM  
Power MOSFETs  
VDSS = 1000 V  
ID25 21 A  
IXFN 21N100Q  
=
Q-Class  
Single MOSFET Die  
RDS(on) = 0.50 Ω  
t ≤ 250 ns  
rr  
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, High dv/dt  
miniBLOC,SOT-227B(IXFN)  
E153432  
Symbol  
TestConditions  
Maximum Ratings  
S
G
VDSS  
VDGR  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
S
VGSM  
D
ID25  
IDM  
IAR  
TC = 25°C  
21  
84  
21  
A
A
A
G = Gate  
S = Source  
D = Drain  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
EAR  
EAS  
TC = 25°C  
60  
mJ  
J
Features  
2.5  
• IXYS advanced low Qg process  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
5
V/ns  
• Lowgatechargeandcapacitances  
- easier to drive  
-fasterswitching  
PD  
TC = 25°C  
520  
W
• UnclampedInductiveSwitching(UIS)  
rated  
TJ  
-55 to +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
VISOL  
• Low RDS (on)  
• Fastintrinsicdiode  
• Internationalstandardpackage  
• miniBLOC withAluminiumnitride  
isolationforlowthermalresistance  
• Lowterminalinductance(<10nH)and  
straycapacitancetoheatsink(<35pf)  
• Molding epoxies meet UL 94 V-0  
flammabilityclassification  
-55 to +150  
50/60 Hz, RMS t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
IISOL≤ 1 mA  
Md  
Mountingtorque  
Terminalconnectiontorque  
1.5/13  
1.5/13  
Nm/lb.in.  
Nm/lb.in.  
Weight  
30  
g
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
• DC-DC converters  
• Batterychargers  
min.  
typ.  
max.  
• Switched-modeandresonant-mode  
power supplies  
VDSS  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 1.5 mA  
1000  
2.5  
V
V
VGS(th)  
4.5  
• DC choppers  
• Temperatureandlightingcontrols  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100  
nA  
VDS = VDSS  
VGS = 0 V  
100  
2
µA  
mA  
Advantages  
TJ = 125°C  
• Easy to mount  
• Space savings  
• High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
0.50  
Ω
98762A (12/01)  
© 2001 IXYS All rights reserved  
IXFN 21N100Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
miniBLOC, SOT-227 B  
VDS = 20 V; ID = 0.5 • ID25, pulse test  
16  
22  
S
Ciss  
Coss  
Crss  
5900  
550  
90  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
21  
18  
60  
12  
ns  
ns  
ns  
ns  
tr  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
18  
td(off)  
RG = 1 Ω (External)  
M4 screws (4x) supplied  
tf  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
B
31.50  
7.80  
31.88  
8.20  
1.240  
0.307  
1.255  
0.323  
Qg(on)  
Qgs  
170  
38  
nC  
nC  
nC  
C
D
4.09  
4.09  
4.29  
4.29  
0.161  
0.161  
0.169  
0.169  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
75  
E
F
4.09  
4.29  
0.161  
0.587  
0.169  
0.595  
14.91  
15.11  
G30.12  
30.30  
1.186  
1.193  
RthJC  
RthCK  
0.24 K/W  
K/W  
H
38.00  
38.23  
1.496  
1.505  
J
11.68  
8.92  
12.22  
9.60  
0.460  
0.351  
0.481  
0.378  
0.05  
K
L
0.76  
0.84  
0.030  
0.496  
0.033  
0.506  
M
12.60  
12.85  
N
O
25.15  
1.98  
25.42  
2.13  
0.990  
0.078  
1.001  
0.084  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
P
4.95  
5.97  
0.195  
1.045  
0.235  
1.059  
Q
26.54  
26.90  
Symbol  
IS  
TestConditions  
R
S
3.94  
4.72  
4.42  
4.85  
0.155  
0.186  
0.174  
0.191  
T
24.59  
-0.05  
25.07  
0.1  
0.968  
0.987  
0.004  
VGS = 0 V  
21  
84  
A
A
V
U
-0.002  
ISM  
Repetitive; pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
250 ns  
QRM  
IRM  
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
1.4  
8
µC  
A
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXFN 21N100Q  
35  
30  
25  
20  
15  
10  
5
35  
30  
25  
20  
15  
10  
5
TJ = 25OC  
TJ = 125OC  
VGS = 9V  
8V  
7V  
6V  
VGS = 9V  
8V  
7V  
6V  
5V  
4V  
5V  
4V  
0
0
0
5
10  
VDS - Volts  
15  
20  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
Fig.1 Output Characteristics @ Tj = 25°C  
Fig.2 OutputCharacteristics@Tj =125°C  
2.6  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
VGS = 10V  
VGS = 10V  
2.2  
1.8  
1.4  
1.0  
TJ = 125OC  
ID = 21A  
ID =10.5A  
TJ = 25OC  
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
TJ - Degrees C  
ID - Amperes  
Fig.3 RDS(on) vs. DrainCurrent  
Fig.4 TemperatureDependenceofDrain  
toSourceResistance  
24  
20  
16  
12  
8
25  
20  
15  
10  
5
o
T
= 150 C  
J
TJ = 125OC  
TJ = 25oC  
4
0
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5  
-50 -25  
0
25 50 75 100 125 150  
VGS - Volts  
TC - Degrees C  
Fig.5 DrainCurrentvs.CaseTemperature  
Fig.6 DrainCurrentvsGateSourceVoltage  
© 2001 IXYS All rights reserved  
IXFN 21N100Q  
30000  
10000  
10  
8
Ciss  
V
DS = 500 V  
f = 100kHz  
ID = 21 A  
IG = 10 mA  
Coss  
6
1000  
100  
4
Crss  
2
0
0
5
10 15 20 25 30 35 40  
0
40  
80  
120  
160  
200  
VDS - Volts  
Gate Charge - nC  
Fig.7GateChargeCharacteristicCurve  
Fig.8 Capacitance Curves  
80  
60  
40  
20  
0
TJ = 125OC  
TJ = 25OC  
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
VSD - Volts  
Fig.9DrainCurrentvsDraintoSourceVoltage  
1.000  
0.100  
0.010  
0.001  
10-4  
10-3  
10-2  
10-1  
100  
101  
Pulse Width - Seconds  
Fig.10TransientThermalImpedance  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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