Advanced Technical Information
HiPerFETTM
Power MOSFETs
IXFN 22N120
VDSS = 1200V
ID25 22A
RDS(on) = 0.55Ω
trr ≤ 300ns
=
N-Channel Enhancement Mode
AvalancheRated, Highdv/dt, Lowtrr
D
G
S
S
Symbol
TestConditions
Maximum Ratings
miniBLOC,SOT-227B(IXFN)
E153432
VDSS
VDGR
TJ = 25°C to 150°C
1200
1200
V
V
S
TJ = 25°C to 150°C; RGS = 1 MΩ
G
VGS
Continuous
Transient
±30
±40
V
V
VGSM
S
ID25
TC = 25°C, Chip capability
22
A
D
IDM
IAR
TC = 25°C, pulse width limited by TJM
TC = 25°C
88
22
A
A
G = Gate
D = Drain
TAB = Drain
EAR
TC = 25°C
30
5
mJ
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ≤ 150°C, RG = 2 Ω
,
V/ns
PD
TC= 25°C
625
W
Features
TJ
-55 ... +150
150
°C
°C
°C
•Internationalstandardpackages
•miniBLOC, withAluminiumnitride
isolation
TJM
Tstg
-55 ... +150
•Low RDS (on) HDMOSTM process
•Ruggedpolysilicongatecellstructure
•UnclampedInductiveSwitching(UIS)
rated
VISOL
Md
50/60 Hz, RMS
ISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
I
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
•Lowpackageinductance
•FastintrinsicRectifier
Weight
30
g
Applications
•DC-DC converters
•Batterychargers
•Switched-modeandresonant-mode
power supplies
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
1200
3.0
V
V
•DC choppers
VGH(th)
5.0
•Temperatureandlightingcontrols
IGSS
IDSS
VGS = ±30 VDC, VDS = 0
±200 nA
50 µA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
2
mA
Advantages
•Easy to mount
•Space savings
•High power density
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
0.55
Ω
© 2001 IXYS All rights reserved
DS98967(12/02)
