PolarTM Power MOSFET
HiPerFETTM
VDSS = 1200V
ID25 = 23A
RDS(on) ≤ 460mΩ
≤ 300ns
IXFN26N120P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
trr
miniBLOC, SOT-227 B (IXFN)
E153432
Symbol
VDSS
Test Conditions
Maximum Ratings
S
TJ = 25°C to 150°C
1200
1200
V
V
G
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
S
ID25
IDM
TC = 25°C
23
60
A
A
D
D = Drain
TC = 25°C, pulse width limited by TJM
G = Gate
S = Source
IA
TC = 25°C
TC = 25°C
13
A
J
EAS
1.5
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
20
V/ns
W
695
Features
TJ
-55 ... +150
150
°C
°C
°C
• International standard package
• Encapsulating epoxy meets
UL94V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
TJM
Tstg
-55 ... +150
TL
1.6mm (0.062 in.) from case for 10s
300
°C
• Fast recovery diode
• Unclamped Inductive Switching (UIS)
rated
VISOL
50/60 Hz, RMS
t = 1min
2500
3000
V~
V~
IISOL ≤ 1mA
t = 1s
• Low package inductance
- easy to drive and to protect
Md
Mounting torque
Terminal connection torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
Advantages
Weight
30
g
• Easy to mount
• Space savings
• High power density
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ. Max.
Applications:
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 1mA
VGS = ± 30V, VDS = 0V
1200
3.5
V
V
z High Voltage Switched-mode and
resonant-mode power supplies
z High Voltage Pulse Power Applications
z High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
6.5
± 200 nA
IDSS
VDS = VDSS
VGS = 0V
50 μA
5 mA
TJ = 125°C
z High Voltage DC-DC converters
z High Voltage DC-AC inverters
RDS(on)
VGS = 10V, ID = 13A, Note 1
460 mΩ
DS99887A (3/08)
© 2008 IXYS CORPORATION, All rights reserved
