PolarTM Power MOSFET
HiPerFETTM
VDSS = 1100V
ID25 = 36A
IXFN36N110P
RDS(on) ≤ 240mΩ
N-Channel Enhancement Mode
Avalanche Rated
trr
≤ 300ns
Fast Intrinsic Diode
miniBLOC, SOT-227 B (IXFN)
E153432
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
1100
1100
V
V
S
G
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
ID25
IDM
TC = 25°C
36
110
A
A
S
TC = 25°C, pulse width limited by TJM
D
D = Drain
IAR
TC = 25°C
TC = 25°C
18
2
A
J
G = Gate
S = Source
EAS
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
20
V/ns
W
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
1000
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
• International standard package
• Encapsulating epoxy meets
UL94V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
TL
1.6mm (0.062 in.) from case for 10s
300
°C
VISOL
50/60Hz, RMS
t = 1min
t = 1s
2500
3000
V~
V~
IISOL ≤ 1mA
• Fast recovery diode
• Unclamped Inductive Switching (UIS)
rated
Md
Mounting torque
Terminal connection torque
1.5/13
1.3/ 11.5
Nm/lb.in.
Nm/lb.in.
• Low package inductance
- easy to drive and to protect
Weight
30
g
Advantages
• Easy to mount
• Space savings
• High power density
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 1mA
VGS = ±30V, VDS = 0V
1100
V
V
Applications:
3.5
6.5
z High Voltage Switched-mode and
resonant-mode power supplies
z High Voltage Pulse Power Applications
z High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
±300
nA
IDSS
VDS = VDSS
VGS = 0V
50
4
μA
mA
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
240
mΩ
z High Voltage DC-DC converters
z High Voltage DC-AC inverters
DS99902A (04/08)
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