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IXFN50N80Q2

型号:

IXFN50N80Q2

描述:

HiPerFET功率MOSFET Q系列[ HiPerFET Power MOSFETs Q-Class ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

120 K

HiPerFETTM  
Power MOSFETs  
Q-Class  
IXFN50N80Q2  
VDSS  
ID25  
= 800V  
= 50A  
RDS(on) 160mΩ  
trr 300ns  
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg, Low Intrinsic RG  
High dV/dt, Low trr  
miniBLOC, SOT-227  
E153432  
S
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
800  
800  
V
V
VDGR  
S
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
D
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
50  
A
A
G = Gate  
S = Source  
D = Drain  
200  
IA  
TC = 25°C  
TC = 25°C  
50  
5
A
J
EAS  
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
( Gate Return ) Terminal.  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
20  
V/ns  
W
1135  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z International Standard Package  
z miniBLOC, with Aluminium Nitride  
Isolation  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Isolation Voltage 2500 V~  
z High Current Handling Capability  
z Fast Intrinsic Rectifier  
VISOL  
50/60 Hz, RMS  
IISOL 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
z Avalanche Rated  
z
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Low RDS(on)  
Advantages  
Weight  
30  
g
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
800  
3.0  
Typ.  
Max.  
z Switch-Mode and Resonant-Mode  
Power Supplies >500kHz Switching  
z DC-DC Converters  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 8mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
5.5  
z
±200 nA  
DC Choppers  
z Pulse Generation  
z Laser Drivers  
IDSS  
50 μA  
3 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
160 mΩ  
DS99028C(01/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFN50N80Q2  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
32  
48  
S
Ciss  
Coss  
Crss  
13.5  
1180  
213  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
26  
25  
60  
13  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Qg(on)  
Qgs  
260  
56  
nC  
nC  
nC  
(M4 screws (4x) supplied)  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
120  
RthJC  
RthCS  
0.11 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
50  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 50A, VGS = 0V, Note 1  
200  
1.5  
trr  
QRM  
300 ns  
IF = 25A, VGS = 0V  
1.1  
8.0  
μC  
-di/dt = 100A/μs  
VR = 100V  
IRM  
A
Note 1. Pulse test, t 300μs, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFN50N80Q2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
7V  
VGS = 10V  
7V  
6V  
5V  
6V  
5V  
0
0
0
0
1
2
3
4
5
6
7
8
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 25A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
VGS = 10V  
6V  
5V  
I D = 50A  
I D = 25A  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 25A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
60  
50  
40  
30  
20  
10  
0
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFN50N80Q2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
2.5  
0.2  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
1.4  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
160  
140  
120  
100  
80  
VDS = 400V  
I
I
D = 25A  
G = 10mA  
60  
TJ = 125ºC  
40  
TJ = 25ºC  
20  
0
40160240  
0.4  
0.6  
0.8  
1.0  
1.2  
0
80  
120  
200  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
100,000  
10,000  
1,000  
100  
0.200  
0.100  
= 1 MHz  
f
C
iss  
C
oss  
0.010  
C
rss  
0.001  
0.00001  
5
10  
15  
20  
25  
30  
35  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF:F_50N80Q2(95)1-18-10-C  
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