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IXFN52N90P

型号：

IXFN52N90P

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

112 K

下载PDF手册
Preliminary Technical Information  
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 900V  
ID25 = 43A  
RDS(on) ≤ 160mΩ  
≤ 300ns  
IXFN52N90P  
N-Channel Enhancement Mode  
Avalanche Rated  
trr  
Fast Intrinsic Diode  
miniBLOC, SOT-227  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25°C to 150°C  
900  
900  
V
V
G
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
S
ID25  
IDM  
TC = 25°C  
43  
A
A
D
TC = 25°C, pulse width limited by TJM  
104  
G = Gate  
D = Drain  
S = Source  
IA  
TC = 25°C  
TC = 25°C  
26  
2
A
J
EAS  
Either Source terminal S can be used as the  
Source terminal or the Kelvin Source (gate  
return) terminal.  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
V/ns  
W
890  
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
z International standard package  
z miniBLOC, with Aluminium nitride  
isolation  
-55 ... +150  
TL  
1.6mm (0.062 in.) from case for 10s  
300  
°C  
z Avalanche Rated  
z Low package inductance  
z Fast intrinsic diode  
Advantages  
VISOL  
50/60 Hz, RMS  
t = 1min  
2500  
3000  
V~  
V~  
IISOL ≤ 1mA  
t = 1s  
Md  
Mounting torque  
Terminal connection torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
z Low gate drive requirement  
z High power density  
Weight  
30  
g
Applications:  
z Switched-mode and resonant-mode  
power supplies  
Symbol  
Test Conditions  
Characteristic Values  
z DC-DC Converters  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
z Laser Drivers  
z AC and DC motor drives  
z Robotics and servo controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
900  
3.5  
V
V
6.5  
± 200 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
50 μA  
4 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 26A, Note 1  
160 mΩ  
DS100065(10/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFN52N90P  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 26A, Note 1  
Gate input resistance  
20  
35  
S
RGi  
1.56  
Ω
Ciss  
Coss  
Crss  
19  
1180  
24  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 26A  
RG = 1Ω (External)  
63  
80  
95  
42  
ns  
ns  
ns  
ns  
Qg(on)  
Qgs  
308  
117  
132  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 26A  
Qgd  
RthJC  
RthCS  
0.14 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
56  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
208  
1.5  
trr  
300 ns  
IF = 26A, -di/dt = 100A/μs  
QRM  
IRM  
1.8  
μC  
VR = 100V  
26  
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN52N90P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
9V  
VGS = 10V  
9V  
8V  
7V  
8V  
7V  
0
0
0
0
1
2
3
4
5
6
7
8
9
20  
90  
0
5
10  
15  
20  
25  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 26A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
9V  
VGS = 10V  
I D = 52A  
8V  
I D = 26A  
7V  
6V  
0
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 26A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
-50  
-25  
0
25  
50  
75  
100  
125  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXFN52N90P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
5.0  
0.3  
0
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
1.3  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
160  
140  
120  
100  
80  
VDS = 450V  
I D = 26A  
I G = 10mA  
6
60  
TJ = 125ºC  
4
40  
TJ = 25ºC  
2
20  
0
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
0.001  
C
iss  
C
oss  
C
rss  
f = 1 MHz  
5
10  
10  
15  
20  
25  
30  
35  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Pulse Width - Seconds  
IXYS REF: F_52N90P(97)10-24-08  
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