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IXFN56N90P

型号：

IXFN56N90P

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

114 K

下载PDF手册
Preliminary Technical Information  
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 900V  
ID25 = 56A  
RDS(on) ≤ 135mΩ  
≤ 300ns  
IXFN56N90P  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
trr  
miniBLOC, SOT-227  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25°C to 150°C  
900  
900  
V
V
G
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
S
ID25  
IDM  
TC = 25°C  
56  
A
A
D
TC = 25°C, pulse width limited by TJM  
168  
G = Gate  
D = Drain  
S = Source  
IA  
TC = 25°C  
TC = 25°C  
28  
2
A
J
EAS  
Either Source terminal S can be used as the  
Source terminal or the Kelvin Source (gate  
return) terminal.  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
V/ns  
W
1000  
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z International standard package  
z miniBLOC, with Aluminium nitride  
isolation  
z Avalanche Rated  
z Low package inductance  
z Fast intrinsic diode  
TJM  
Tstg  
-55 ... +150  
TL  
1.6mm (0.062 in.) from case for 10s  
50/60 Hz, RMS  
300  
°C  
VISOL  
t = 1min  
2500  
3000  
V~  
V~  
IISOL ≤ 1mA  
t = 1s  
Advantages  
Md  
Mounting torque  
Terminal connection torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
z Low gate drive requirement  
z High power density  
Weight  
30  
g
Applications:  
z Switched-mode and resonant-mode  
power supplies  
Symbol  
Test Conditions  
Characteristic Values  
z DC-DC Converters  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
z Laser Drivers  
z AC and DC motor drives  
z Robotics and servo controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 8mA  
VDS = VGS, ID = 3mA  
VGS = ± 30V, VDS = 0V  
900  
3.5  
V
V
6.5  
± 200 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
50 μA  
5 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 28A, Note 1  
135 mΩ  
DS100066(10/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFN56N90P  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 28A, Note 1  
Gate input resistance  
27  
44  
S
RGi  
0.85  
Ω
Ciss  
Coss  
Crss  
23  
1385  
106  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
RG = 1Ω (External)  
74  
80  
93  
38  
ns  
ns  
ns  
ns  
(M4 screws (4x) supplied)  
Qg(on)  
Qgs  
375  
80  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
Qgd  
145  
RthJC  
RthCS  
0.125 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
56  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
224  
1.5  
trr  
300 ns  
IF = 28A, -di/dt = 100A/μs  
QRM  
IRM  
1.8  
μC  
VR = 100V  
15  
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN56N90P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
60  
50  
40  
30  
20  
10  
0
120  
100  
80  
60  
40  
20  
0
VGS = 10V  
9V  
VGS = 10V  
9V  
8V  
8V  
7V  
6V  
7V  
6V  
0
0
0
1
2
3
4
5
6
7
8
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 28A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
8V  
VGS = 10V  
I D = 56A  
7V  
I D = 28A  
6V  
5V  
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 28A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
60  
50  
40  
30  
20  
10  
0
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
10 20 30 40 50 60 70 80 90 100 110 120  
ID - Amperes  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXFN56N90P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
25ºC  
125ºC  
- 40ºC  
4.5  
0.3  
0
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
1.1  
35  
8.5  
1.2  
40  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
400  
10  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
180  
160  
140  
120  
100  
80  
VDS = 450V  
I D = 28A  
I G = 10mA  
60  
TJ = 125ºC  
40  
TJ = 25ºC  
20  
0
0
50  
100  
150  
200  
250  
300  
350  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
0.001  
C
iss  
C
oss  
C
rss  
f
= 1 MHz  
5
10  
10  
15  
20  
25  
30  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_56N90P(99)10-24-08  
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