请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXFN56N90P_11

型号：

IXFN56N90P_11

描述：

极地HiPerFET功率MOSFET[ Polar HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

114 K

下载PDF手册
PolarTM HiPerFETTM  
Power MOSFET  
VDSS = 900V  
ID25 = 56A  
IXFN56N90P  
RDS(on) ≤ 145mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
trr  
≤ 300ns  
Fast Intrinsic Diode  
miniBLOC  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25°C to 150°C  
900  
V
V
V
V
G
VDGR  
VGSS  
VGSM  
TJ = 25°C to 150°C, RGS = 1MΩ  
Continuous  
900  
± 30  
± 40  
Transient  
S
D
ID25  
IDM  
TC = 25°C  
56  
A
A
G = Gate  
S = Source  
D = Drain  
TC = 25°C, Pulse Width Limited by TJM  
168  
IA  
TC = 25°C  
TC = 25°C  
28  
2
A
J
Either Source terminal S can be used as the  
Source terminal or the Kelvin Source (gate  
return) terminal.  
EAS  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
1000  
V/ns  
W
Features  
TJ  
-55 ... +150  
150  
°C  
z
TJM  
Tstg  
TL  
°C  
International Standard Package  
miniBLOC, with Aluminium Nitride  
z
-55 ... +150  
300  
°C  
Isolation  
Low RDS(on) and QG  
Avalanche Rated  
Low Package Inductance  
z
1.6mm (0.062 in.) from case for 10s  
50/60 Hz, RMS  
°C  
z
z
VISOL  
t = 1min  
2500  
3000  
V~  
V~  
z
Fast Intrinsic Rectifier  
IISOL ≤ 1mA  
t = 1s  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
Weight  
30  
g
z
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
Laser Drivers  
AC and DC Motor Drives  
Robotics and Servo Controls  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 8mA  
VDS = VGS, ID = 3mA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
900  
V
V
z
z
3.5  
6.5  
z
± 200 nA  
IDSS  
50 μA  
TJ = 125°C  
5 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
145 mΩ  
DS100066A(02/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFN56N90P  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
27  
44  
S
RGi  
0.85  
Ω
Ciss  
Coss  
Crss  
23  
1385  
106  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
74  
80  
93  
38  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
(M4 screws (4x) supplied)  
Qg(on)  
Qgs  
375  
80  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
145  
RthJC  
RthCS  
0.125 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
56  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
224  
1.5  
trr  
300 ns  
IF = 0.5 • ID25, -di/dt = 100A/μs  
QRM  
IRM  
1.8  
15  
μC  
VR = 100V, VGS = 0V  
A
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFN56N90P  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
120  
100  
80  
60  
40  
20  
0
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
9V  
VGS = 10V  
9V  
8V  
8V  
7V  
6V  
7V  
6V  
0
0
0
1
2
3
4
5
6
7
8
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 28A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
60  
50  
40  
30  
20  
10  
0
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
8V  
VGS = 10V  
I D = 56A  
I D = 28A  
7V  
6V  
5V  
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 28A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
60  
50  
40  
30  
20  
10  
0
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
20  
40  
60  
80  
100  
120  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - Amperes  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFN56N90P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
125ºC  
25ºC  
- 40ºC  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
1.2  
40  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
400  
10  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
180  
160  
140  
120  
100  
80  
VDS = 450V  
I
I
D = 28A  
G = 10mA  
60  
TJ = 125ºC  
40  
TJ = 25ºC  
20  
0
0
50  
100  
150  
200  
250  
300  
350  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
1
100,000  
10,000  
1,000  
100  
C
C
iss  
0.1  
0.01  
oss  
C
rss  
f
= 1 MHz  
5
10  
0.001  
0
10  
15  
20  
25  
30  
35  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_56N90P(99)10-24-08  
厂商 型号 描述 页数 下载

ILSI

 		IXF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A20AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.184200s