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IXFN60N80P

型号：

IXFN60N80P

描述：

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

145 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFN 60N80P  
VDSS = 800 V  
ID25 = 53 A  
RDS(on) ≤ 140 mΩ  
trr  
≤ 250 ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
miniBLOC, SOT-227 B (IXFN)  
E153432  
VDSS  
VDGR  
TJ = 25° C to 150° C  
800  
800  
V
V
S
G
TJ = 25° C to 150° C; RGS = 1 MΩ  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
S
ID25  
IDM  
TC =25° C  
TC = 25° C, pulse width limited by TJM  
53  
250  
A
A
D
IAR  
TC =25° C  
30  
A
G = Gate  
D = Drain  
S = Source  
EAR  
EAS  
TC =25° C  
TC =25° C  
100  
5
mJ  
J
Either Source terminal S can be used as the  
Source terminal or the Kelvin Source (gate  
return) terminal.  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 2 Ω  
,
20  
V/ns  
TC =25° C  
1040  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
• International standard package  
• Encapsulating epoxy meets  
UL94V-0, flammability classification  
• miniBLOC with Aluminium nitride  
isolation  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
2500  
3000  
°C  
V~  
V~  
VISOL  
50/60 Hz, RMS  
t = 1 min  
IISOL ≤1 mA  
t = 1 s  
l
Md  
Mounting torque  
Terminal connection torque  
1.5 / 13 Nm/lb.in.  
1.5 / 13 Nm/lb.in.  
Fast recovery diode  
l
Unclamped Inductive Switching (UIS)  
rated  
Weight  
30  
g
l
Low package inductance  
- easy to drive and to protect  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
l
Easy to mount  
Space savings  
High power density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 8 mA  
VGS = 30 VDC, VDS = 0  
800  
V
V
l
l
3.0  
5.0  
200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
3000  
µA  
µA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = IT, Note 1  
140 mΩ  
DS99562E(02/06)  
© 2006 IXYS All rights reserved  
IXFN 60N80P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
SOT-227B Outline  
VDS = 20 V; ID = IT, Note 1  
35  
67  
S
Ciss  
Coss  
Crss  
18  
1200  
44  
nF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
36  
29  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
RG = 1 Ω (External)  
110  
26  
Qg(on)  
Qgs  
250  
90  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
Qgd  
78  
RthJC  
RthCS  
0.12 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
Test Conditions  
IS  
VGS = 0 V  
60  
150  
1.5  
A
ISM  
VSD  
trr  
Repetitive  
A
V
IF = IS, VGS = 0 V, Note 1  
IF = 25A, -di/dt = 100 A/µs  
250  
ns  
QRM  
IRM  
VR = 100V  
0.6  
6.0  
µC  
A
Notes:  
1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %  
Test current IT = 30 A  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFN 60N80P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
120  
100  
80  
60  
40  
20  
0
VGS = 10V  
7V  
V
= 10V  
7V  
GS  
6V  
6V  
5V  
5V  
6
0
0
0
0
1
2
3
4
5
7
8
9
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 30A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.2  
2.8  
2.4  
2
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 60A  
D
I
= 30A  
1.6  
1.2  
0.8  
0.4  
D
5V  
14  
0
2
4
6
8
10  
12  
16  
18  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 30A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.8  
2.6  
2.4  
2.2  
2
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
T
J
= 125ºC  
1.8  
1.6  
1.4  
1.2  
1
T
J
= 25ºC  
0
0.8  
-50  
-25  
0
25  
50  
75  
100  
125  
20  
40  
60  
80  
100  
120  
TJ - Degrees Centigrade  
ID - Amperes  
© 2006 IXYS All rights reserved  
IXFN 60N80P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
80  
70  
60  
50  
40  
30  
20  
10  
0
130  
120  
110  
100  
90  
TJ = 125ºC  
25ºC  
- 40ºC  
80  
T
J
= - 40ºC  
70  
25ºC  
125ºC  
60  
50  
40  
30  
20  
10  
0
4
4.25 4.5 4.75  
5
5.25 5.5 5.75  
6
6.25 6.5 6.75  
0
10  
20  
30  
40  
50  
60  
70  
80  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
180  
160  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 400V  
DS  
I
I
= 30A  
D
G
= 10mA  
60  
T
J
= 125ºC  
40  
T
J
= 25ºC  
20  
0
0.3 0.4  
0.5 0.6  
0.7 0.8  
0.9  
1
1.1 1.2  
1.3 1.4  
0
20 40 60 80 100 120 140 160 180 200 220 240 260  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
1.000  
0.100  
0.010  
0.001  
100,000  
10,000  
1,000  
100  
f = 1 MHz  
C
C
iss  
oss  
C
rss  
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
40  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
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