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IXFN80N50P

型号：

IXFN80N50P

描述：

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

157 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFN 80N50P  
VDSS  
ID25  
RDS(on)  
= 500 V  
= 66 A  
≤
65 mΩ  
trr  
≤ 200 ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
miniBLOC, SOT-227 B (IXFN)  
E153432  
VDSS  
VDGR  
TJ = 25° C to 150° C  
TJ = 25° C to 150° C; RGS = 1 MΩ  
500  
500  
V
V
S
VGS  
VGSM  
Transient  
Continuous  
40  
30  
V
V
G
ID25  
IDM  
TC = 25° C  
66  
200  
A
A
TC = 25° C, pulse width limited by TJM  
S
IAR  
EAR  
EAS  
TC =25°C  
TC =25°C  
TC =25°C  
80  
80  
3.0  
A
mJ  
J
D
G = Gate  
D = Drain  
S = Source  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 2 Ω  
,
10  
V/ns  
Either source tab S can be used forsource  
current or Kelvin gate return.  
TC =25°C  
700  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
VISOL  
Md  
50/60 Hz; IISOL ≤1  
mA  
2500  
V~  
l
Fast intrinsic diode  
International standard package  
Mounting torque  
Terminal connection torque (M4)  
1.5/13 Nm/ib.in.  
1.5/13 Nm/ib.in.  
l
l
Unclamped Inductive Switching (UIS)  
rated  
UL recognized.  
Isolated mounting base  
Weight  
30  
g
l
l
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
l
Easy to mount  
Space savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 500 µA  
500  
V
V
l
l
VDS = VGS, ID = 8 mA  
3.0  
5.0  
High power density  
VGS  
=
30 VDC, VDS = 0  
200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
1
µA  
mA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25, Note 1  
65 mΩ  
© 2006 IXYS All rights reserved  
DS99477E(01/06)  
IXFN 80N50P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
miniBLOC, SOT-227B (IXFN) Outline  
(TJ = 25° C unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 20 V; ID = 0.5 ID25, Note 1  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
35  
70  
S
Ciss  
Coss  
Crss  
12.7  
1280  
120  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
25  
27  
70  
18  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5*ID25  
RG = 2 Ω (External)  
Qg(on)  
Qgs  
195  
70  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
64  
RthJC  
RthCK  
0.18° C/W  
° C/W  
0.05  
Source-Drain Diode  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0 V  
80  
A
A
V
ISM  
Repetitive  
200  
1.5  
VSD  
IF = IS, VGS = 0 V, Note 1  
trr  
IF = 25 A, -di/dt = 100 A/µs  
200 ns  
QRM  
IRM  
VR = 100 V, VGS = 0 V  
0.8  
8
µC  
A
Note 1: Pulse test, t ≤300 µs, duty cycle d ≤ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463  
6771478 B2  
IXFN 80N50P  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25 C  
@ 25 C  
°
°
180  
160  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
8V  
V
10V  
8V  
GS  
GS =  
7V  
7V  
6V  
5V  
60  
6V  
5V  
40  
20  
0
0
0
0
1
2
3
4
5
6
0
3
6
9
12  
15  
18  
2 1  
2 4  
2 7  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on Norm alized to ID  
=
40A  
)
@ 125 C  
°
Value vs. Junction Tem perature  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
5V  
I
= 80A  
D
I
= 40A  
D
0.7  
0.4  
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 6. Drain Current vs. Case  
Tem perature  
Fig. 5. RDS(on) Norm alized to ID  
Value vs. Drain Current  
=
40A  
3.2  
3
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
2.8  
2.6  
2.4  
2.2  
2
T = 125 C  
°
J
1.8  
1.6  
1.4  
1.2  
1
T = 25 C  
°
J
0.8  
20  
40  
60  
80  
100 120 140 160 180  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
I D - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXFN 80N50P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
140  
120  
100  
80  
140  
120  
100  
80  
T = -40 C  
°
J
25 C  
°
125 C  
°
T = 125 C  
°
J
25 C  
°
60  
60  
-40 C  
°
40  
40  
20  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
250  
200  
150  
100  
50  
V
= 250V  
DS  
I
I
= 40A  
D
G
= 10mA  
T = 125 C  
°
J
T = 25 C  
°
J
0
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
0
20 40 60 80 100 120 140 160 180 200  
VS D - Volts  
Q G - NanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
100000  
10000  
1000  
100  
1000  
100  
10  
f = 1MHz  
R
Limit  
DS(on)  
C
C
iss  
25µs  
100µs  
1ms  
oss  
10ms  
T = 150 C  
°
DC  
J
C
rss  
35  
T
= 25 C  
°
C
10  
1
0
5
10  
15  
20  
25  
30  
40  
10  
100  
1000  
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFN 80N50P  
Fig. 13. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2006 IXYS All rights reserved  
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