PolarHVTM HiPerFET
Power MOSFET
IXFN 82N60P
VDSS
ID25
RDS(on)
= 600 V
= 82
≤ 75 mΩ
≤ 200 ns
A
N-Channel Enhancement Mode
Avalanche Rated
trr
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
E153432
VDSS
VDGR
TJ = 25° C to 150° C
600
600
V
V
S
G
TJ = 25° C to 150° C; RGS = 1 MΩ
VGSS
VGSM
Continuous
Transient
30
40
V
V
S
ID25
IDM
TC =25° C
72
A
A
D
D = Drain
TC = 25° C, pulse width limited by TJM
200
G = Gate
IAR
TC =25° C
82
A
S = Source
EAR
EAS
TC =25° C
TC =25° C
100
5
mJ
J
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 2 Ω
,
20
V/ns
W
Features
• International standard package
TC =25° C
1040
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C • Encapsulating epoxy meets
°C
°C
UL94V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TL
1.6 mm (0.062 in.) from case for 10 s
300
°C
VISOL
50/60 Hz, RMS,
T = 1 min
T = 1 s
2500
3000
V~
V~
IISOL ≤1 mA,
• Low package inductance
• Fast intrinsic Rectifier
Md
Mounting torque, Terminal connection torque
1.5/13
30
lb.in.
g
Weight
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
VGS = 30 VDC, VDS = 0
600
V
V
• DC choppers
• Temperature and lighting controls
• Low voltage relays
3.0
5.0
200
nA
Advantages
• Easy to mount
• Space savings
• High power density
IDSS
VDS = VDSS
VGS = 0 V
25
1000
µA
µA
TJ = 125° C
RDS(on)
VGS = 10 V, ID = IT, Note 1
75 mΩ
DS99559E(01/06)
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