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IXFP05N100M

型号：

IXFP05N100M

描述：

高压HiperFET[ High Voltage HiperFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

109 K

下载PDF手册
Preliminary Technical Information  
VDSS = 1000V  
ID25 = 700mA  
RDS(on) ≤ 17Ω  
High Voltage HiperFET  
IXFP05N100M  
(Electrically Isolated Tab)  
trr  
≤ 300ns  
N-Channel Enhancement Mode  
Avalanche Rated  
OVERMOLDED TO-220  
(IXFP...M) OUTLINE  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1 MΩ  
1000  
1000  
V
V
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
Isolated Tab  
G
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
700  
3
mA  
A
D
S
IA  
EAS  
TC = 25°C  
TC = 25°C  
1
100  
A
mJ  
G = Gate  
S = Source  
D = Drain  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ =150°C  
TC = 25°C  
5
V/ns  
W
25  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
Features  
ꢀPlastic overmolded tab for electrical  
isolation  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
ꢀInternational standard package  
ꢀAvalanche rated  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
ꢀLow package inductance  
Weight  
2.5  
g
Advantages  
ꢀ
Easy to mount  
Space savings  
High power density  
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
ꢀ
(TJ = 25°C, unless otherwise specified)  
BVDSS  
VGS(th)  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
1000  
V
V
2.5  
4.5  
IGSS  
IDSS  
VGS = ±30V, VDS = 0V  
±100 nA  
VDS = VDSS  
VGS = 0V  
25 μA  
500 μA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 375mA, Note 1  
15  
17  
Ω
© 2008 IXYS CORPORATION, All rights reserved  
DS100069(11/08)  
IXFP05N100M  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
ISOLATED TO-220 (IXFP...M)  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS = 20V, ID = 500mA, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Resistive Switching Times  
0.55  
0.93  
S
Ciss  
Coss  
Crss  
260  
22  
8
pF  
pF  
pF  
1
2
3
td(on)  
tr  
td(off)  
tf  
11  
19  
40  
28  
ns  
ns  
ns  
ns  
VGS = 10V, VDS = 0.5  
ꢀ
VDSS, ID = 1A  
RG = 47Ω (External)  
Qg(on)  
Qgs  
7.8  
1.4  
4.1  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5  
ꢀ
VDSS, ID = 1A  
Qgd  
Terminals: 1 - Gate  
2 - Drain (Collector)  
RthJC  
5.0 °C/W  
3 - Source (Emitter)  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Symbol  
IS  
Test Conditions  
VGS = 0V  
Min.  
Typ.  
Max.  
750 mA  
ISM  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
3
A
V
VSD  
1.5  
trr  
IRM  
300 ns  
A
IF = 1A, -di/dt = 100A/μs,  
VR = 100V, VGS = 0V  
1.8  
QRM  
200  
nC  
Notes:1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2 %.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFP05N100M  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Output Characteristics  
@ 125ºC  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
VGS = 10V  
VGS = 10V  
8V  
7V  
6V  
7V  
6V  
5.5V  
5.5V  
5V  
5V  
4.5V  
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30  
VDS - Volts  
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30  
VDS - Volts  
Fig. 3. RDS(on) Normalized to ID = 375mA  
Value vs. Junction Temperature  
Fig. 4. RDS(on) Normalized to ID = 375mA  
Value vs. Drain Current  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
VGS = 10V  
TJ = 125ºC  
I D = 750mA  
I D = 375mA  
TJ = 25ºC  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
TJ = 125ºC  
25ºC  
- 40ºC  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXFP05N100M  
Fig. 8. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 7. Transconductance  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
TJ = 25ºC  
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2  
ID - Amperes  
0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9  
VSD - Volts  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
10  
9
8
7
6
5
4
3
2
1
0
1,000  
100  
10  
VDS = 500V  
= 1 MHz  
f
I
I
D = 1A  
G = 1mA  
C
iss  
C
oss  
C
rss  
1
0
5
10  
15  
20  
25  
30  
35  
40  
0
1
2
3
4
5
6
7
8
QG - NanoCoulombs  
VDS - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
10.0  
1.0  
0.1  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_05N100M(1TM)7-29-08  
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