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IXFP130N10T2

型号：

IXFP130N10T2

描述：

TrenchT2 HiperFET功率MOSFET[ TrenchT2 HiperFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

181 K

下载PDF手册
Advance Technical Information  
TrenchT2TM HiperFETTM  
Power MOSFET  
VDSS = 100V  
ID25 = 130A  
RDS(on) ≤ 9.1mΩ  
IXFA130N10T2  
IXFP130N10T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXFA)  
Fast Intrnsic Rectifier  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (Tab)  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
TO-220AB (IXFP)  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
ID25  
ILRMS  
TC = 25°C (Chip Capability)  
Lead Current Limit, RMS  
130  
120  
A
A
G
D
D (Tab)  
= Drain  
S
IDM  
TC = 25°C, Pulse Width Limited by TJM  
300  
A
IA  
TC = 25°C  
TC = 25°C  
65  
A
G = Gate  
S = Source  
D
EAS  
800  
mJ  
Tab = Drain  
dV/dt  
PD  
IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C  
TC = 25°C  
20  
V/ns  
W
360  
Features  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
z International Standard Packages  
z 175°C Operating Temperature  
z High Current Handling Capability  
z Fast Intrinsic Rectifier  
TJM  
Tstg  
-55 ... +175  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z Dynamic dV/dt Rated  
z
Low RDS(on)  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
100  
2.0  
V
V
Applications  
4.5  
z DC-DC Converters  
z Battery Chargers  
±200 nA  
z Switch-Mode and Resonant-Mode  
Power Supplies  
IDSS  
10 μA  
TJ = 150°C  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
500 μA  
z DC Choppers  
z AC Motor Drives  
RDS(on)  
9.1 mΩ  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
DS100111(10/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFA130N10T2  
IXFP130N10T2  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 (IXFA) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
45  
68  
S
Ciss  
Coss  
Crss  
6600  
640  
pF  
pF  
pF  
133  
td(on)  
tr  
td(off)  
tf  
16  
38  
24  
25  
ns  
ns  
ns  
ns  
1. Gate  
Resistive Switching Times  
2. Collector  
3. Emitter  
4. Collector  
Bottom Side  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3.3Ω (External)  
Qg(on)  
Qgs  
130  
35  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
Qgd  
42  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
RthJC  
RthCH  
0.42 °C/W  
°C/W  
TO-220  
0.50  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
Source-Drain Diode  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
130  
520  
1.3  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 65A, VGS = 0V, Note 1  
TO-220 (IXFP) Outline  
trr  
100  
ns  
A
IF = 65A, VGS = 0V  
IRM  
QRM  
4.8  
-di/dt = 100A/μs  
VR = 50V  
156  
nC  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFA130N10T2  
IXFP130N10T2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
140  
120  
100  
80  
VGS = 15V  
10V  
VGS = 15V  
10V  
9V  
9V  
8V  
7V  
8V  
7V  
60  
6V  
5V  
40  
6V  
5V  
20  
0
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
2
4
6
8
10  
12  
14  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 65A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
140  
120  
100  
80  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 15V  
VGS = 10V  
10V  
9V  
8V  
I D = 130A  
7V  
6V  
I D = 65A  
60  
40  
20  
5V  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 65A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
140  
120  
100  
80  
External Lead Current Limit  
VGS = 10V  
15V  
- - - -  
TJ = 175ºC  
60  
40  
20  
TJ = 25ºC  
250  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
50  
100  
150  
200  
300  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFA130N10T2  
IXFP130N10T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
160  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
150ºC  
60  
TJ = 125ºC  
25ºC  
- 40ºC  
40  
20  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
1.5  
40  
0
0
1
20  
40  
60  
80  
100  
120  
140  
160  
180  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
350  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 50V  
I D = 65A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120 130  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1,000  
100  
10  
10,000  
1,000  
100  
25µs  
100µs  
RDS(on) Limit  
C
iss  
1ms  
= 1 MHz  
f
10ms  
C
oss  
rss  
100ms  
DC  
TJ = 175ºC  
T
C = 25ºC  
C
Single Pulse  
1
0
5
10  
15  
20  
25  
30  
35  
10  
VDS - Volts  
100  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_130N10T2(V5)9-30-09-A  
IXFA130N10T2  
IXFP130N10T2  
Fig. 13. Resistive Turn-on  
Fig. 14. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Rise Time vs. Drain Current  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
52  
48  
44  
40  
36  
32  
28  
24  
RG = 3.3ꢀ  
GS = 10V  
VDS = 50V  
RG = 3.3Ω  
VGS = 10V  
VDS = 50V  
V
TJ = 25ºC  
I D = 130A  
I D = 65A  
TJ = 125ºC  
65  
25  
3
70  
75  
80  
85  
90  
95  
100 105 110 115 120 125 130  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
300  
250  
200  
150  
100  
50  
40  
35  
30  
25  
20  
15  
10  
50  
45  
40  
35  
30  
25  
20  
15  
10  
50  
45  
40  
35  
30  
25  
20  
15  
10  
t r  
t
d(on) - - - -  
tf  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
RG = 3.3Ω, VGS = 10V  
V
DS = 50V  
VDS = 50V  
I D = 65A  
I D = 130A, 65A  
I D = 130A  
0
3
4
5
6
7
8
9
10  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
130  
110  
90  
180  
150  
120  
90  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
tf  
t
d(off) - - - -  
tf  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 50V  
RG = 3.3ꢀ, VGS = 10V  
V
VDS = 50V  
I D = 65A, 130A  
70  
TJ = 125ºC  
50  
60  
TJ = 25ºC  
30  
30  
10  
0
65  
70  
75  
80  
85  
90  
95 100 105 110 115 120 125 130  
ID - Amperes  
4
5
6
7
8
9
10  
RG - Ohms  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFA130N10T2  
IXFP130N10T2  
Fig. 19. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_130N10T2(V5)9-30-09-A  
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