IXFP 3N50PM
ISOLATED TO-220 (IXTP...M)
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 1.8 A, Note 1
3.5
S
Ciss
Coss
Crss
409
48
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
1
2
3
6.1
td(on)
tr
td(off)
tf
25
28
63
29
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 3.6 A
RG = 50 Ω (External)
Qg(on)
Qgs
9.3
3.3
3.4
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 1.8
Qgd
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
RthJC
3.5 °C/W
Source-Drain Diode
Characteristic Values
(TJ = 25° C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
3.6
A
A
V
ISM
Repetitive
5
VSD
IF = IS, VGS = 0 V, Note 1
1.5
trr
IF = 3.6 A, -di/dt = 100 A/µs,
200 ns
QRM
IRM
VR = 100 V, VGS = 0 V
0.1
0.5
µC
A
Notes:
1) Pulse test, t ≤300 µs, duty cycle d≤ 2 %
2) Test current IT = 2.5 A
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineer-
ing lots; but also may yet contain some information supplied during a pre-production
design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-
sions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
