IXFP4N100PM
Symbol
Test Conditions
Characteristic Values
ISOLATED TO-220 (IXFP...M)
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 2A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
1.8
3.0
S
Ciss
Coss
Crss
1456
90
pF
pF
pF
16
RGi
1.6
Ω
1
2
3
td(on)
tr
td(off)
tf
24
36
37
50
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 2A
RG = 5Ω (External)
Qg(on)
Qgs
26
9
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 2A
Qgd
12
Terminals: 1 - Gate
2 - Drain
RthJC
2.2 °C/W
3 - Source
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
4
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS , VGS = 0V, Note 1
16
1.3
300
trr
ns
μC
A
IF = 2A, -di/dt = 100A/μs
QRM
IRM
0.34
5.30
VR = 100V, VGS = 0V
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463 6,771,478 B2 7,071,537
7,005,734 B2 7,157,338B2
7,063,975 B2
