IXFP4N100QM
Symbol
Test Conditions
Characteristic Values
OVERMOLDED TO-220 (IXFP...M)
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 2A, Note 1
2.5
4.3
S
Ciss
Coss
Crss
1185
130
65
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
17
15
32
18
ns
ns
ns
ns
1
2
3
Resistive Switching Times
VGS = 10V, VDS = 0.5 VDSS, ID = 2A,
ꢀ
RG = 4.7Ω (External)
Qg(on)
Qgs
43.5
6.2
nC
nC
nC
VGS= 10V, VDS = 0.5
ꢀ
VDSS, ID = 2A
Qgd
23.0
RthJC
2.7 °C/W
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
4
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
16
1.5
trr
QRM
IRM
250 ns
IF = 4A, -di/dt = 100A/μs,
VR = 100V, VGS = 0V
480
6.16
nC
A
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
