IXFA7N100P
IXFP7N100P
Symbol
Test Conditions
Characteristic Values
TO-263 (IXFA) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS= 20V, ID = 0.5 • ID25, Note 1
3.6
6.0
S
RGi
Gate Input Resistance
1.8
Ω
Ciss
Coss
Crss
2590
158
26
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
1. Gate
td(on)
tr
td(off)
tf
25
49
42
44
ns
ns
ns
ns
2. Collector
3. Emitter
4. Collector
Bottom
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Side
RG = 10Ω (External)
Qg(on)
Qgs
47
21
21
nC
nC
nC
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
Qgd
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
RthJC
RthCS
0.42 °C/W
°C/W
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
TO-220
0.50
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100 BSC
.320
.575
.090
.040
.050
0
.625
.110
.055
.070
.005
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max
TO-220 (IXFP) Outline
IS
VGS = 0V, Note1
7
A
A
V
ISM
VSD
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
28
1.3
trr
QRM
IRM
300
ns
μC
A
IF = 3.5A, -di/dt = 100A/μs
0.4
4.0
VR = 100V
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
