IXFP7N80PM
ISOLATED TO-220 (IXFP...M)
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 20 V; ID = 3.5 A, Note 1
5
9.5
S
Ciss
Coss
Crss
1890
133
13
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
1
2
3
td(on)
tr
td(off)
tf
28
32
55
24
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 4 A
RG = 10 Ω (External)
Qg(on)
Qgs
32
12
9
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 6 A
Qgd
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
RthJC
2.5 °C/W
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
7
A
A
V
ISM
Repetitive
18
VSD
IF = IS, VGS = 0 V, Note 1
1.5
trr
IF = 7 A, -di/dt = 100 A/μs,
250 ns
QRM
IRM
VR = 100 V, VGS = 0 V
0.3
3
μC
A
Notes:
1) Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2
7,063,975 B2
6,771,478 B2 7,071,537
