Advanced Technical Information
HiPerFETTM Power MOSFETs
IXFR 150N15 VDSS = 150 V
ISOPLUS247TM
ID25 = 105 A
RDS(on) = 12.5 mW
(Electrically Isolated Backside)
trr £ 250 ns
Single MOSFET Die
ISOPLUS 247TM
Symbol
TestConditions
MaximumRatings
E153432
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
150
150
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
ID(RMS)
IDM
TC = 25°C (MOSFET chip capability)
Externallead(currentlimit)
TC = 25°C, Note 1
105
76
600
150
A
A
A
A
G = Gate
D = Drain
S = Source
IAR
TC = 25°C
*Patentpending
EAR
EAS
TC = 25°C
TC = 25°C
60
3
mJ
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
Features
PD
TJ
TC = 25°C
400
W
• SiliconchiponDirect-Copper-Bond
substrate
- High power dissipation
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
- Isolated mounting surface
- 2500V electricalisolation
• Low drain to tab capacitance(<35pF)
TL
1.6 mm (0.063 in.) from case for 10 s
300
2500
5
°C
V~
g
• Low R
HDMOSTM process
• RuggeDdSp(oon)lysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
VISOL
Weight
50/60 Hz, RMS
t = 1 min
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
• AC and DC motor and servo controls
• Amplifiers
Symbol
VDSS
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8mA
150
2.0
V
VGS(th)
IGSS
4.0 V
VGS = ±20 V, VDS = 0
±100nA
Advantages
• Easy assembly
• Space savings
• High power density
• Low collector capacitance to ground
(low EMI)
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100 mA
2 mA
RDS(on)
VGS = 10 V, ID = IT
Notes 2, 3
12.5 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98656(03/17/00)
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