IXFR 200N10P
ISOPLUS247 Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 100 A, Note 1
60
97
S
Ciss
Coss
Crss
7600
2900
860
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
30
35
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
RG = 3.3 Ω (External)
150
90
Qg(on)
Qgs
235
50
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 100 A
Qgd
135
RthJC
RthCS
0.5K/W
K/W
0.15
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
200
A
A
V
ISM
Repetitive
400
1.5
VSD
IF = IS, VGS = 0 V, Note 1
trr
IF = 25 A, dI/dt = 100 A/μs
150 ns
QRM
IRM
VR = 50 V, VGS = 0 V
0.4
6
μC
A
Notes; 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
