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IXFR20N120P

型号：

IXFR20N120P

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

111 K

下载PDF手册
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 1200V  
ID25 = 13A  
RDS(on) ≤ 630mΩ  
≤ 300ns  
IXFR20N120P  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
trr  
ISOPLUS247 (IXFR)  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1200  
1200  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
ID25  
IDM  
TC = 25°C  
13  
50  
A
A
Isolated Tab  
TC = 25°C, pulse width limited by TJM  
IA  
TC = 25°C  
TC = 25°C  
10  
1
A
J
G = Gate  
S = Source  
D
= Drain  
EAS  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
15  
V/ns  
W
Features  
290  
• Silicon chip on Direct-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
• Low drain to tab capacitance(<30pF)  
TL  
Maximum lead temperature for soldering  
Plastic body for 10s  
300  
260  
°C  
°C  
V~  
• Low R  
HDMOSTM process  
• RuggeDdS p(ono)lysilicon gate cell structure  
TSOLD  
VISOL  
FC  
• Unclamped Inductive Switching (UIS)  
• Fraatsetdintrinsic Rectifier  
50/60 Hz, RMS, 1 minute  
Mounting force  
2500  
20..120/4.5..27  
5
N/lb.  
Advantages  
Weight  
g
• Easy assembly  
• Space savings  
• High power density  
Symbol  
Test Conditions  
Characteristic Values  
Applications:  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
z High Voltage Switched-mode and  
resonant-mode power supplies  
z High Voltage Pulse Power Applications  
z High Voltage Discharge circuits in  
Lasers Pulsers, Spark Igniters, RF  
Generators  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
1200  
3.5  
V
V
6.5  
± 200 nA  
25 μA  
IDSS  
VDS = VDSS  
VGS = 0V  
z High Voltage DC-DC converters  
z High Voltage DC-AC inverters  
TJ = 125°C  
5
mA  
RDS(on)  
VGS = 10V, ID = 10A, Note 1  
630 mΩ  
DS99888A (04/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFR20N120P  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS247 (IXFR) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 10A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate input resistance  
10  
16  
S
Ciss  
Coss  
Crss  
11.1  
600  
60  
nF  
pF  
pF  
RGi  
1.60  
Ω
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A  
RG = 1Ω (External)  
49  
45  
72  
70  
ns  
ns  
ns  
ns  
Qg(on)  
Qgs  
193  
74  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A  
Qgd  
85  
RthJC  
RthCS  
0.43 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
20  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
80  
1.5  
trr  
300 ns  
IF = 10A, -di/dt = 100A/μs  
QRM  
IRM  
0.84  
μC  
VR = 100V, VGS = 0V  
9
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFR20N120P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
20  
18  
16  
14  
12  
10  
8
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
9V  
VGS = 10V  
9V  
8V  
8V  
7V  
6
4
7V  
2
0
0
0
2
4
6
8
10  
12  
0
5
10  
15  
20  
25  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 10A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
20  
18  
16  
14  
12  
10  
8
VGS = 10V  
8V  
VGS = 10V  
I D = 20A  
I D = 10A  
7V  
6V  
6
4
2
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26  
VDS - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 10A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
14  
13  
12  
11  
10  
9
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
8
7
6
5
4
3
TJ = 25ºC  
2
1
0
0
5
10  
15  
20  
25  
30  
35  
40  
-50  
-25  
0
25  
50  
75  
100  
125  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXFR20N120P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
35  
30  
25  
20  
15  
10  
5
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
0
0
0
5
10  
15  
20  
25  
30  
35  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
1.3  
40  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
60  
50  
40  
30  
20  
10  
0
VDS = 600V  
I D = 10A  
I G = 10mA  
6
TJ = 125ºC  
4
TJ = 25ºC  
2
0
0
40  
80  
120  
160  
200  
240  
280  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
0.001  
= 1 MHz  
f
C
iss  
C
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_20N120P(86) 04-03-08-B  
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