HiPerFETTMPowerMOSFETs
ISOPLUS247TM
IXFR 21N100Q
VDSS
ID25
RDS(on)
= 1000 V
18 A
= 0.50 Ω
=
(Electrically Isolated Back Surface)
trr ≤ 250 ns
N-Channel Enhancement Mode, Low Qg,
High dv/dt, Low trr, HDMOSTM Family
ISOPLUS247TM
E153432
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
1000
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
Isolated backside*
D = Drain
ID25
IDM
IAR
TC = 25°C
TC = 25°C, Note 1
TC = 25°C
18
84
21
A
A
A
G = Gate
S = Source
* Patent pending
EAR
EAS
TC = 25°C
TC = 25°C
60
2.5
mJ
J
Features
z Silicon chip on Direct-Copper-Bond
substrate
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
10
V/ns
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
PD
TC = 25°C
350
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
z IXYS advanced low Qg process
z Low gate charge and capacitances
- easier to drive
-faster switching
z Low drain to tab capacitance(<30pF)
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
TL
1.6 mm (0.063 in.) from case for 10 s
300
2500
5
°C
V~
g
VISOL
Weight
50/60 Hz, RMS
t = 1 min
z Rated for Unclamped Inductive Load
Switching (UIS)
z Fast intrinsic Rectifier
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
z
DC-DC converters
z
Battery chargers
z
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 4mA
1000
3
V
5 V
Switched-mode and resonant-mode
power supplies
z
DC choppers
z AC motor control
VGS = ±20 V, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
100 µA
2 mA
Advantages
TJ = 125°C
z
Easy assembly
z
RDS(on)
VGS = 10 V, ID = IT
Notes 2, 3
0.5
Ω
Space savings
z
High power density
DS98723B(01/03)
© 2003 IXYS All rights reserved
