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IXFR24N80P

型号：

IXFR24N80P

描述：

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

93 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFR 24N80P  
VDSS  
ID25  
=
=
800  
13  
V
A
RDS(on) ≤ 420 mΩ  
trr  
(Electrically Isolated Back Surface)  
≤ 200  
ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS247 (IXFR)  
E153432  
VDSS  
VDGR  
TJ = 25°C to 150°C  
800  
800  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
S
Isolated Tab  
= Drain  
ID25  
IDM  
TC = 25°C  
13  
55  
A
A
TC = 25°C, pulse width limited by TJM  
G = Gate  
D
S = Source  
IAR  
TC = 25°C  
12  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
50  
mJ  
J
1.5  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
10  
V/ns  
Features  
z Silicon chip on Direct-Copper-Bond  
substrate  
TC = 25°C  
208  
W
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
°C  
°C  
V~  
z International standard package  
z Fast recovery diode  
TL  
TSOLD  
VISOL  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
50/60 Hz, RMS, 1 minute  
300  
260  
2500  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
FC  
Weight  
Mounting force  
20..120/4.6..27  
5
N/lb  
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
Easy to mount  
Space savings  
High power density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 4 mA  
VGS = 30 V, VDS = 0 V  
800  
V
V
z
z
3.0  
5.0  
100  
25  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
μA  
μA  
TJ = 125°C  
1000  
RDS(on)  
VGS = 10 V, ID = IT (note 1)  
420 mΩ  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
DS99600E(07/06)  
© 2006 IXYS All rights reserved  
IXFR 24N80P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
ISOPLUS247 (IXFR) Outline  
VDS = 20 V; ID = IT, pulse test  
15  
25  
S
Ciss  
Coss  
Crss  
7200  
470  
26  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
32  
27  
75  
24  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
RG =2 Ω (External)  
Qg(on)  
Qgs  
105  
30  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
Qgd  
33  
RthJC  
RthCS  
0.6 °C/W  
°C/W  
0.15  
Note 1: Test current IT = 12 A  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
IS  
Test Conditions  
VGS = 0 V  
24  
55  
A
ISM  
Repetitive  
A
V
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
trr  
IF = 25A, -di/dt = 100 A/μs  
250  
ns  
QRM  
IRM  
VR = 100V, VGS = 0 V  
0.8  
6.0  
μC  
A
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFR 24N80P  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
Fig. 1. Output Characteristics  
@ 25ºC  
24  
22  
20  
18  
16  
14  
12  
10  
8
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
VGS = 10V  
7V  
6V  
6V  
5V  
6
4
5V  
2
0
0
0
0
0
1
2
3
4
5
6
7
8
9
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 12A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
24  
22  
20  
18  
16  
14  
12  
10  
8
V
= 10V  
6V  
GS  
V
= 10V  
GS  
5V  
I
= 24A  
D
I
= 12A  
D
6
4
0.7  
0.4  
2
0
2
4
6
8
10  
12  
14  
16  
18  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
Fig. 5. RDS(on) Normalized to ID = 12A Value  
vs. Drain Current  
16  
14  
12  
10  
8
3
2.8  
2.6  
2.4  
2.2  
2
V
= 10V  
GS  
T = 125ºC  
J
1.8  
1.6  
1.4  
1.2  
1
6
4
T = 25ºC  
J
2
0
0.8  
-50  
-25  
0
25  
50  
75  
100  
125  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
TJ - Degrees Centigrade  
ID - Amperes  
© 2006 IXYS All rights reserved  
IXFR 24N80P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
40  
36  
32  
28  
24  
20  
16  
12  
8
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
25ºC  
- 40ºC  
4
0
0
3
3.5  
4
4.5  
5
5.5  
6
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
36  
32  
28  
24  
20  
16  
12  
8
10  
9
8
7
6
5
4
3
2
1
0
V
= 400V  
DS  
I
I
= 12A  
D
G
= 10mA  
T
J
= 125ºC  
T
J
= 25ºC  
4
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100 110  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
C
iss  
C
oss  
f = 1 MHz  
5
C
rss  
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
10  
15  
20  
25  
30  
35  
40  
Pulse W idth - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_24N80P (8J) 6-22-06.xls  
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