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IXFR32N80P

型号：

IXFR32N80P

描述：

PolarHV HiPerFET功率MOSFET ISOPLUS247[ PolarHV HiPerFET Power MOSFET ISOPLUS247 ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

149 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
ISOPLUS247TM  
VDSS = 800  
V
A
IXFR 32N80P  
ID25  
=
20  
R
≤ 290 mΩ  
trrDS(on) ≤ 250 ns  
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS247 (IXFR)  
E153432  
VDSS  
VDGR  
TJ = 25° C to 150° C  
800  
800  
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
b)  
ID25  
IDM  
TC = 25° C  
20  
70  
A
A
G = Gate  
S = Source  
D = Drain  
TC = 25° C, pulse width limited by TJM  
IAR  
TC =25° C  
16  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
50  
mJ  
J
1.5  
Features  
l
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 4 Ω  
,
10  
V/ns  
Silicon chip on Direct-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
TC =25° C  
300  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
l
l
l
l
Low drain to tab capacitance(<30pF)  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
° C  
Rated for Unclamped Inductive Load  
Switching (UIS)  
FC  
Mounting force  
20..120/4.5..26  
N/lb  
V~  
g
l
Fast intrinsic Rectifier  
VISOL  
Weight  
50/60 Hz, RMS t = 1 minute  
2500  
5
Applications  
l
DC-DC converters  
l
Battery chargers  
l
Switched-mode and resonant-mode  
Symbol  
Test Conditions  
Characteristic Values  
power supplies  
l
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
DC choppers  
l
AC motor control  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 8 mA  
VGS = 30 VDC, VDS = 0  
800  
V
V
3.0  
5.0  
Advantages  
l
Easy assembly  
200  
nA  
l
Space savings  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
1000  
µA  
µA  
l
High power density  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = IT  
290 mΩ  
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %  
DS99419E(01/06)  
© 2006 IXYS All rights reserved  
IXFR 32N80P  
ISOPLUS 247 OUTLINE  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ. Max.  
VDS = 20 V; ID = IT, pulse test  
23  
38  
S
Ciss  
Coss  
Crss  
8800  
700  
26  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
30  
24  
85  
24  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25  
RG = 2 Ω (External)  
Qg(on)  
Qgs  
150  
40  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
Qgd  
44  
RthJC  
RthCs  
0.42 ° C/W  
° C/W  
0.15  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ. Max.  
Symbol  
IS  
Test Conditions  
VGS = 0 V  
Repetitive  
32  
70  
A
ISM  
A
V
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤300 µs, duty cycle d≤ 2 %  
trr  
IF = 25A, -di/dt = 100 A/µs  
250  
ns  
QRM  
IRM  
VR = 100V  
0.8  
6.0  
µC  
A
Note: Test current IT = 16A  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFR 32N80P  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25  
º
C
@ 25 C  
º
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
7V  
V
= 10V  
6V  
GS  
GS  
6V  
5V  
5V  
4V  
4V  
0
0
1
2
3
4
5
6
7
8
9
10  
0
5
10  
15  
20  
25  
30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Norm alized to ID = 16A  
)
º
C
Value vs. Junction Tem perature  
35  
30  
25  
20  
15  
10  
5
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1.0  
0.7  
0.4  
V
= 10V  
6V  
GS  
V
= 10V  
GS  
5V  
I
= 32A  
D
I
= 16A  
D
4V  
18  
0
0
3
6
9
12  
15  
21  
24  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Norm alized to  
ID = 16A Value vs. Drain Current  
Fig. 6. Drain Curre nt vs . Cas e  
Te m pe rature  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
20  
18  
16  
14  
12  
10  
8
V
= 10V  
GS  
º
T = 125 C  
J
6
4
º
T = 25 C  
J
2
0
0
10  
20  
30  
40  
50  
60  
70  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
I D - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXFR 32N80P  
Fig. 8. Transconductance  
Fig. 7. Input Adm ittance  
45  
40  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
º
= 125 C  
T
J
º
25 C  
º
-40 C  
º
= -40 C  
T
J
º
25 C  
º
125 C  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
3
3.5  
4
4.5  
5
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 400V  
DS  
I
I
= 16A  
D
G
= 10mA  
º
= 125 C  
T
J
º
= 25 C  
T
J
0.3 0.4 0.5 0.6 0.7 0.8 0.9  
1
1.1 1.2  
0
20  
40  
60  
80  
100 120 140 160  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Maxim um Transient Therm al  
Resistance  
Fig. 11. Capacitance  
100000  
10000  
1000  
100  
1.00  
0.10  
0.01  
f = 1MHz  
C
C
iss  
oss  
C
rs  
10  
1
10  
100  
1000  
0
5
10  
15  
20  
25  
30  
35  
40  
VD S - Volts  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFR 32N80P  
Fig. 13. Maxim um Transient Therm al Resistance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2006 IXYS All rights reserved  
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