请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXFR36N50P

型号：

IXFR36N50P

描述：

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

248 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFC 36N50P  
IXFR 36N50P  
VDSS = 500  
ID25 19  
V
A
=
RDS(on) ≤ 190 mΩ  
≤ 200 ns  
(Electrically Isolated Back Surface)  
trr  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS220TM (IXFC)  
E153432  
VDSS  
VDGR  
TJ = 25° C to 150° C  
500  
500  
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
S
Isolated back surface  
ID25  
IDM  
TC = 25° C  
19  
A
A
TC = 25° C, pulse width limited by TJM  
100  
ISOPLUS247TM (IXFR)  
E153432  
IAR  
TC =25° C  
TC =25° C  
TC =25° C  
36  
50  
A
mJ  
J
EAR  
EAS  
1.5  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 4 Ω  
,
20  
V/ns  
G
D
Isolated back surface  
TC =25° C  
156  
W
S
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
D = Drain  
S = Source  
TL  
1.6 mm (0.062 in.) from case for 10 s  
50/60 Hz, RMS, 1 minute  
300  
°C  
Features  
l
International standard isolated  
packages  
UL recognized packages  
VISOL  
2500  
V~  
l
FC  
Mounting Force  
(IXFC)  
(IXFR)  
11..65 / 2.5..15  
20..120 / 4.5..25  
N/lb  
N/lb  
l
Silicon chip on Direct-Copper-Bond  
Weight  
(IXFC)  
(IXFR)  
3
5
g
g
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic diode  
Symbol  
Test Conditions  
Characteristic Values  
l
l
l
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
500  
V
V
VDS = VGS, ID = 4 mA  
2.5  
5.0  
VGS  
=
30 VDC, VDS = 0  
100  
nA  
Advantages  
Easy to mount  
Space savings  
High power density  
l
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
l
TJ = 125° C  
l
RDS(on)  
VGS = 10 V, ID = IT  
190 mΩ  
DS99312E(10/05)  
© 2006 IXYS All rights reserved  
IXFC 36N50P  
IXFR 36N50P  
ISOPLUS220TM (IXFC) Outline  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ. Max.  
VDS = 20 V; ID = T, Note 1  
23  
35  
S
Ciss  
Coss  
Crss  
5500  
510  
40  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
29  
23  
82  
23  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 ID25  
Note:  
RG = 4 Ω (External)  
Bottom heatsink (Pin 4) is  
electrically isolated from Pin  
1,2, or 3.  
Qg(on)  
Qgs  
93  
30  
31  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
Qgd  
RthJC  
RthCS  
0.75 ° C/W  
(ISOPLUS 247)  
(ISOPLUS 220)  
0.15  
0.21  
° C/W  
° C/W  
Source-Drain Diode  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min. Typ. Max.  
Ref: IXYS CO 0177 R0  
VGS = 0 V  
36  
100  
1.5  
A
ISOPLUS247 Outline  
ISM  
Repetitive  
A
V
VSD  
IF = IS, VGS = 0 V,  
trr  
IF = 25A, -di/dt = 100 A/µs  
200  
ns  
A
IRM  
QRM  
VR = 100 V; VGS = 0 V  
8
0.6  
µC  
Notes:  
1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %;  
2. Test current IT = 18A.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFC 36N50P  
IXFR 36N50P  
Fig. 2. Extended Output Characteristics  
Fig. 1. Output Characteristics  
@ 25 C  
º
@ 25  
º
C
36  
32  
28  
24  
20  
16  
12  
8
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
8V  
V
= 10V  
8V  
GS  
GS  
7V  
7V  
6.5V  
6V  
6V  
5.5V  
5V  
5.5V  
5V  
4
0
0
0
0
1
2
3
4
5
6
7
16  
80  
0
2
4
6
8
10 12 14 16 18 20 22 24  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Norm alized to ID = 18A  
)
º
C
Value vs. Junction Tem perature  
36  
32  
28  
24  
20  
16  
12  
8
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 36A  
D
5.5V  
I
= 18A  
D
5V  
4.5V  
4
0.7  
0.4  
0
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Norm alized to  
ID = 18A Value vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Tem perature  
20  
18  
16  
14  
12  
10  
8
3.4  
3
V
= 10V  
GS  
T = 125ºC  
J
2.6  
2.2  
1.8  
1.4  
1
6
4
T = 25ºC  
J
2
0.6  
0
10  
20  
30  
40  
50  
60  
70  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
I D - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXFC 36N50P  
IXFR 36N50P  
Fig. 8. Transconductance  
Fig. 7. Input Adm ittance  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
T
J
= -40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
25ºC  
-40ºC  
0
4
4.5  
5
5.5  
6
6.5  
7
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 250V  
DS  
I
I
= 18A  
D
G
= 10mA  
T = 125ºC  
J
T = 25ºC  
J
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
10 20 30 40 50 60 70 80 90 100  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forw ard-Bias  
Safe Ope rating Are a  
Fig. 11. Capacitance  
10000  
1000  
100  
1000  
100  
10  
T
T
= 150ºC  
= 25ºC  
J
C
C
iss  
C
R
Lim it  
DS(on)  
25µs  
oss  
rss  
100µs  
1m s  
10m s  
f = 1MHz  
C
D C  
1
10  
10  
100  
1000  
0
5
10  
15  
20  
25  
30  
35  
40  
V D S - V olts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFC 36N50P  
IXFR 36N50P  
Fig. 13. Maxim um Transient Therm al Resistance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYSREF: F_36N50P(7J)12-06-05-C.xls  
© 2006 IXYS All rights reserved  
厂商 型号 描述 页数 下载

ILSI

 		IXF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A20AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.163197s