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IXFR36N60P

型号：

IXFR36N60P

描述：

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

144 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFR 36N60P  
VDSS  
ID25  
=
=
600  
20  
V
A
RDS(on) ≤ 200 mΩ  
trr  
(Electrically Isolated Back Surface)  
≤ 200  
ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS247 (IXFR)  
E153432  
VDSS  
VDGR  
TJ = 25° C to 150° C  
600  
600  
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
S
Isolated Tab  
= Drain  
ID25  
IDM  
TC =25° C  
20  
80  
A
A
TC = 25° C, pulse width limited by TJM  
G = Gate  
D
S = Source  
IAR  
TC =25° C  
36  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
50  
mJ  
J
1.5  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 2 Ω  
,
20  
V/ns  
Features  
Silicon chip on Direct-Copper-Bond  
substrate  
l
TC = 25° C  
208  
°C  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
International standard package  
Fast recovery diode  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
°C  
°C  
V~  
l
l
l
TL  
TSOLD  
VISOL  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
50/60 Hz, RMS, 1 minute  
300  
260  
2500  
l
FC  
Weight  
Mounting force  
20..120/4.6..27  
5
N/lb  
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
l
Easy to mount  
Space savings  
High power density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 30 V, VDS = 0 V  
600  
V
V
l
l
3.0  
5.0  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = IT (note 1)  
200 mΩ  
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %  
DS99395E(03/06)  
© 2006 IXYS All rights reserved  
IXFR 36N60P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
ISOPLUS247 (IXFR) Outline  
VDS = 20 V; ID = IT, pulse test  
25  
40  
S
Ciss  
Coss  
Crss  
5800  
570  
30  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
30  
25  
80  
22  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
RG =2 Ω (External)  
Qg(on)  
Qgs  
102  
34  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
Qgd  
36  
RthJC  
RthCS  
0.6 °C/W  
°C/W  
0.15  
Note 1: Test current IT = 18 A  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
IS  
Test Conditions  
VGS = 0 V  
36  
80  
A
ISM  
Repetitive  
A
V
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤300 µs, duty cycle d≤ 2 %  
trr  
IF = 25A, -di/dt = 100 A/µs  
200  
ns  
QRM  
IRM  
VR = 100V, VGS = 0 V  
0.8  
6.0  
µC  
A
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFR 36N60P  
Fig. 2. Extended Output Characteristics  
Fig. 1. Output Characteristics  
@ 25  
º
@ 25 C  
º
C
36  
32  
28  
24  
20  
16  
12  
8
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
GS  
= 10V  
8V  
V
= 10V  
7V  
GS  
7V  
6V  
6V  
4
5V  
5V  
0
0
0
0
1
2
3
4
5
6
7
16  
90  
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Norm alized to ID = 18A  
)
º
C
Value vs. Junction Tem perature  
36  
32  
28  
24  
20  
16  
12  
8
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
5V  
I
= 36A  
D
I
= 18A  
D
4
0.7  
0.4  
0
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Norm alized to  
ID = 18A Value vs. ID  
Fig. 6. Drain Curre nt vs . Cas e  
Te m pe rature  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
22  
20  
18  
16  
14  
12  
10  
8
V
= 10V  
GS  
T
J
= 125ºC  
6
T = 25ºC  
J
4
2
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
10  
20  
30  
40  
50  
60  
70  
80  
TC - Degrees Centigrade  
I D - Amperes  
© 2006 IXYS All rights reserved  
IXFR 36N60P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
T = -40ºC  
J
25ºC  
125ºC  
T = 125ºC  
J
25ºC  
-40ºC  
0
3.5  
0.4  
0
4
4.5  
5
5.5  
6
6.5  
1.2  
40  
0
10  
20  
30  
40  
50  
60  
70  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 300V  
DS  
I
I
= 18A  
D
G
= 10mA  
T = 125ºC  
J
T = 25ºC  
J
0
10 20 30 40 50 60 70 80 90 100 110  
0.5  
0.6  
0.7  
0.8 0.9  
1
1.1  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. M axim um Trans ie nt The rm al  
Re s is tance  
Fig. 11. Capacitance  
10000  
1000  
100  
1.00  
0.10  
0.01  
C
iss  
C
oss  
f = 1MHz  
C
rss  
10  
5
10  
15  
20  
25  
30  
35  
1
10  
100  
1000  
VD S - Volts  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
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