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IXFR40N50Q2_08

型号：

IXFR40N50Q2_08

描述：

HiPerFET功率MOSFET Q2级[ HiPerFET Power MOSFET Q2-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

116 K

下载PDF手册
HiPerFETTM  
Power MOSFET  
Q2-Class  
IXFR40N50Q2  
VDSS = 500V  
ID25 = 29A  
RDS(on) ≤ 170mΩ  
≤ 250ns  
trr  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low Qg  
Low intrinsic Rg, low trr  
ISOPLUS247 (IXFR)  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
500  
500  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
Isolated Tab  
ID25  
IDM  
TC = 25°C  
29  
A
A
TC = 25°C, pulse width limited by TJM  
160  
IA  
TC = 25°C  
TC = 25°C  
40  
A
J
G = Gate  
D = Drain  
EAS  
2.5  
S = Source  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
V/ns  
W
Features  
320  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
• Double metal process for low gate  
resistance  
• International standard package  
• EpoxymeetUL94V-0, flammability  
classification  
• Low Rds(on), low Qg  
• Avalanche energy and current rated  
• Fast intrinsic recfifier  
TJM  
Tstg  
-55 ... +150  
TL  
Maximum lead temperature for soldering  
Plastic body for 10s  
300  
260  
°C  
°C  
V~  
TSOLD  
VISOL  
FC  
50/60 Hz, RMS, 1 minute  
Mounting force  
2500  
Applications  
20..120/4.5..27  
5
N/lb.  
• DC-DC converters  
Weight  
g
• Switched-mode and resonant-mode  
power supplies, >500kHz switching  
• DC choppers  
• Pulse generation  
• Laser drivers  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 4mA  
VGS = ± 30V, VDS = 0V  
500  
3.0  
V
V
Advantages  
5.5  
• Easy to mount  
• Space savings  
• High power density  
± 200 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
50 μA  
2 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 20A, Note 1  
170 mΩ  
DS99075C(05/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFR40N50Q2  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS247 (IXFR) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 20A, Note 1  
15  
28  
S
Ciss  
Coss  
Crss  
4850  
680  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
170  
td(on)  
tr  
td(off)  
tf  
17  
13  
42  
8
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 20A  
RG = 1Ω (External)  
Qg(on)  
Qgs  
110  
25  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 20A  
Qgd  
50  
RthJC  
RthCS  
0.39 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
40  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
160  
1.5  
trr  
250 ns  
IF = 25A, -di/dt = 100A/μs  
QRM  
IRM  
1
μC  
VR = 100V, VGS = 0V  
9
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFR40N50Q2  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25 C  
º
@ 25 C  
º
40  
35  
30  
25  
20  
15  
10  
5
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
GS = 10V  
7V  
V
GS = 10V  
8V  
6V  
7V  
6V  
5.5V  
5V  
4.5V  
5V  
0
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
0
1
2
3
4
5
6
7
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 C  
º
Fig. 4. RDS(on) Normalized to 0.5 ID25 Value  
vs. Junction Temperature  
40  
35  
30  
25  
20  
15  
10  
5
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
7V  
VGS = 10V  
6V  
5.5V  
I
= 40A  
D
5V  
I
= 20A  
D
4.5V  
0
0
2
4
6
8
VD S - Volts  
10  
12  
14  
16  
-50 -25  
0
25  
50  
75  
100 125 150  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to 0.5 ID25 Value  
vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
32  
28  
24  
20  
16  
12  
8
V
GS = 10V  
T = 125ºC  
J
T = 25ºC  
J
4
0
0
10 20 30 40 50 60 70 80 90 100  
I D - Amperes  
-50 -25  
0
25  
50  
TC - Degrees Centigrade  
75  
100 125 150  
© 2008 IXYS CORPORATION, All rights reserved  
IXFR40N50Q2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T = - 40ºC  
J
25ºC  
T = 125ºC  
J
25ºC  
- 40ºC  
125ºC  
0
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65  
I D - Amperes  
3.0  
3.5  
4.0  
4.5 5.0  
VG S - Volts  
5.5  
6.0  
6.5  
Fig. 9. Source Current vs. Source-To-Drain  
Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 250V  
I = 20A  
D
I
G
= 10mA  
T = 125ºC  
J
T = 25ºC  
J
0.4  
0.5  
0.6  
0.7 0.8 0.9  
VS D - Volts  
1.0  
1.1  
1.2  
0
10 20 30 40 50 60 70 80 90 100 110  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
10000  
1000  
100  
C
iss  
R
Limit  
DS(on)  
25µs  
C
oss  
100µs  
1ms  
10ms  
C
rss  
T = 150ºC  
J
DC  
T = 25ºC  
C
f
= 1MHz  
5
Single Pulse  
1
0
10  
15  
20  
VD S - Volts  
25  
30  
35  
40  
10  
100  
VD S - Volts  
1000  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFR40N50Q2  
Fig. 13. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00  
0.1  
1
10  
100  
1000  
10000  
Pulse Width - milliseconds  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: F_40N50Q2 (84) 05-28-08-C  
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