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IXFR44N50Q_03

型号：

IXFR44N50Q_03

描述：

HiPerFET功率MOSFET ISOPLUS247 ， Q系列[ HiPerFET Power MOSFETs ISOPLUS247, Q-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

536 K

下载PDF手册
HiPerFETTM  
VDSS ID25  
RDS(on)  
Power MOSFETs  
IXFR 44N50Q 500 V 34 A 120 mΩ  
ISOPLUS247TM, Q-Class  
IXFR 48N50Q 500 V 40 A 110 mΩ  
trr ≤ 250 ns  
(Electrically Isolated Backside)  
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, High dv/dt  
ISOPLUS247TM  
Symbol  
TestConditions  
Maximum Ratings  
E153432  
VDSS  
VDGR  
T
= 25°C to 150°C  
500  
500  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
Isolated backside*  
ID25  
IDM  
IAR  
TC = 25°C  
44N50Q  
48N50Q  
44N50Q  
48N50Q  
44N50Q  
48N50Q  
34  
40  
A
A
A
A
A
A
TC = 25°C, Note 1  
TC = 25°C  
176  
192  
44  
G = Gate  
S = Source  
D = Drain  
48  
EAR  
EAS  
T
= 25°C  
60  
2.5  
mJ  
J
TCC = 25°C  
* Patent pending  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
15  
V/ns  
Features  
z Silicon chip on Direct-Copper-Bond  
substrate  
PD  
TC = 25°C  
310  
W
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z Low drain to tab capacitance(<30pF)  
z IXYS advanced low Qg process  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
2500  
5
°C  
V~  
g
z Rugged polysilicon gate cell structure  
z Rated for Unclamped Inductive Load  
Switching (UIS)  
VISOL  
Weight  
50/60 Hz, RMS  
t = 1 min  
z Fast intrinsic diode  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
power supplies  
z
z
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250µA  
VDS = VGS, ID = 4mA  
VGS = 20 V, VDS = 0  
500  
2.0  
V
4.0 V  
z
DC choppers  
z AC motor control  
100 nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
100 µA  
Advantages  
z
TJ = 125°C  
2 mA  
Easy assembly  
Space savings  
z
RDS(on)  
VGS = 10 V, ID = IT  
Notes 2, 3  
44N50Q  
48N50Q  
120 mΩ  
110 mΩ  
z
High power density  
© 2003 IXYS All rights reserved  
DS98702D(08/03)  
IXFR 44N50Q  
IXFR 48N50Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS247OUTLINE  
VDS = 10 V; ID = IT  
Notes 2, 3  
30  
42  
S
Ciss  
Coss  
Crss  
7000  
960  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
230  
td(on)  
tr  
td(off)  
tf  
33  
22  
75  
10  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT  
RG = 1 Ω (External), Notes 2, 3  
Qg(on)  
Qgs  
190  
40  
nC  
nC  
1 Gate, 2 Drain (Collector)  
3 Source (Emitter)  
V
= 10 V, VDS = 0.5 • VDSS, ID = IT  
NGoStes 2, 3  
4 no connection  
Qgd  
86  
nC  
0.40 K/W  
K/W  
Dim.  
Millimeter  
Inches  
Min.  
Max. Min. Max.  
RthJC  
RthCK  
A
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
A
0.15  
A12  
b
b12  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
b
C
D
E
0.61  
0.80  
.024 .031  
.819 .840  
.620 .635  
.215 BSC  
.780 .800  
.150 .170  
20.80 21.34  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
15.75 16.13  
e
5.45 BSC  
Symbol  
TestConditions  
L
19.81 20.32  
L1  
3.81  
4.32  
IS  
VGS = 0 V  
48  
192  
1.5  
A
A
V
Q
5.59  
6.20  
.220 .244  
R
4.32  
4.83  
.170 .190  
ISM  
VSD  
Repetitive; Note 1  
IF = IT, VGS = 0 V, Notes 2, 3  
trr  
250 ns  
QRM  
IRM  
1.0  
10  
µC  
IF = 25A,-di/dt = 100 A/µs, VR = 100 V  
A
Note: 1. Pulse width limited by TJM  
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
3. IXFR44N50Q: I = 22 A  
IXFR48N50Q: ITT = 24 A  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXFR 44N50Q  
IXFR 48N50Q  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
48  
42  
36  
30  
24  
18  
12  
6
120  
90  
60  
30  
0
VGS = 10V  
VGS = 10V  
7V  
8V  
7V  
6V  
5V  
6V  
5V  
0
0
0
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10 12 14 16 18 20  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. RDS(on) Normalized to ID25 Value vs.  
Junction Temperature  
48  
42  
36  
30  
24  
18  
12  
6
2.8  
2.6  
2.4  
2.2  
2
VGS = 10V  
VGS = 10V  
7V  
6V  
1.8  
1.6  
1.4  
1.2  
1
ID = 48A  
ID = 24A  
5V  
0.8  
0.6  
0.4  
0
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID25  
Value vs. ID  
Fig. 6. Drain Curre nt vs . Cas e  
Te m pe rature  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0.7  
0
12 24 36 48 60 72 84 96 108 120  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
I D - Amperes  
TC - Degrees Centigrade  
© 2003 IXYS All rights reserved  
IXFR 44N50Q  
IXFR 48N50Q  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
80  
70  
60  
50  
40  
30  
20  
10  
0
60  
54  
48  
42  
36  
30  
24  
18  
12  
6
TJ = -40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
-40ºC  
0
3.5  
4
4.5  
5
5.5  
6
6.5  
0
6
12 18 24 30 36 42 48 54 60  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs. Source-To-  
Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 250V  
ID = 24A  
IG = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0.3 0.4 0.5 0.6 0.7 0.8 0.9  
1
1.1 1.2  
0
20 40 60 80 100 120 140 160 180 200  
Q G - nanoCoulombs  
VS D - Volts  
Fig. 12. M axim um Trans ie nt The rm al  
Re s is tance  
Fig. 11. Capacitance  
10000  
1000  
100  
1
f = 1MHz  
C
iss  
C
C
oss  
rss  
30  
0.1  
0.01  
0
5
10  
15  
20  
25  
35  
40  
1
10  
100  
1000  
Pulse Width - milliseconds  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
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