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IXFR48N60P

型号：

IXFR48N60P

描述：

PolarHV HiPerFET功率MOSFET ISOPLUS247[ PolarHV HiPerFET Power MOSFET ISOPLUS247 ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

144 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
ISOPLUS247TM  
IXFR 48N60P  
VDSS  
ID25  
= 600 V  
= 32 A  
RDS(on) ≤ 150 mΩ  
≤ 200 ns  
trr  
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS247 (IXFR)  
E153432  
VDSS  
VDGR  
TJ = 25° C to 150° C  
600  
600  
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
TAB  
ID25  
IDM  
TC =25° C  
32  
A
A
S
TC = 25° C, pulse width limited by TJM  
110  
IAR  
TC =25° C  
32  
A
G = Gate  
S = Source  
D = Drain  
EAR  
EAS  
TC =25° C  
TC =25° C  
70  
mJ  
J
2.0  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 4 Ω  
,
20  
V/ns  
Features  
TC =25° C  
300  
W
l
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
°C  
V~  
International standard isolated  
package  
UL recognized package  
l
l
TL  
1.6 mm (0.062 in.) from case for 10 s  
50/60 Hz, RMS, 1 minute  
300  
Silicon chip on Direct-Copper-Bond  
substrate  
VISOL  
2500  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic diode  
FC  
Mounting Force  
20..120 / 4.5..26  
5
N/lb.  
g
Weight  
l
l
l
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 8 mA  
VGS = 30 VDC, VDS = 0  
600  
V
V
l
Easy to mount  
Space savings  
High power density  
l
3.0  
5.0  
l
200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
1000  
µA  
µA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = IT  
150 mΩ  
DS99184E(12/05)  
© 2006 IXYS All rights reserved  
IXFR48N60P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
ISOPLUS247 Outline  
VDS = 20 V; ID = IT, Notes 1, 2  
35  
53  
S
Ciss  
Coss  
Crss  
8860  
850  
60  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
30  
25  
85  
22  
ns  
ns  
ns  
ns  
VDS = 0.5 VDSS, ID = IT, VGS = 10 V  
RG = 2 Ω (External)  
Qg(on)  
Qgs  
150  
50  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
Qgd  
50  
RthJC  
RthCS  
0.42 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
IS  
Test Conditions  
VGS = 0 V  
32  
A
ISM  
Repetitive  
110  
1.5  
A
V
VSD  
IF = IS, VGS = 0 V, Note 1  
trr  
IF = 20A, -di/dt = 100 A/µs  
200  
ns  
µC  
A
QRM  
IRM  
VR = 480V  
0.8  
6.0  
Notes:  
1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;  
2. Test current IT = 24 A.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFR 48N60P  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
8V  
V
= 10V  
8V  
GS  
120  
100  
80  
60  
40  
20  
0
GS  
7V  
7V  
6V  
6V  
5V  
5V  
16  
0
0
4
8
12  
2 0  
2 4  
0
1
2
3
4
5
6
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Norm alized to ID = 24A  
)
ºC  
Value vs. Junction Tem perature  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 48A  
D
I
= 24A  
D
5V  
0.7  
0.4  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0
2
4
6
8
10  
12  
14  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Norm alized to  
ID = 24A Value vs. Drain Current  
Fig. 6. Drain Curre nt vs . Case  
Tem pe rature  
35  
30  
25  
20  
15  
10  
5
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
GS  
T = 125ºC  
J
T = 25ºC  
J
0
0.7  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
20  
40  
60  
80  
100  
120  
140  
TC - Degrees Centigrade  
I D - Amperes  
© 2006 IXYS All rights reserved  
IXFR48N60P  
Fig. 8. Transconductance  
Fig. 7. Input Adm ittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= 125ºC  
25ºC  
-40ºC  
T
J
= -40ºC  
25ºC  
125ºC  
4
4.5  
5
5.5  
6
6.5  
7
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
160  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 300V  
DS  
I
I
= 24A  
D
G
= 10mA  
60  
T
J
= 125ºC  
40  
T
J
= 25ºC  
20  
0
0
20  
40  
60  
80  
100 120 140 160  
0.4 0.5 0.6 0.7 0.8 0.9  
1
1.1 1.2 1.3  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 13. M axim um Trans ie nt The rm al  
Re s is tance  
Fig. 11. Capacitance  
100000  
10000  
1000  
100  
1.00  
f = 1MHz  
C
C
iss  
0.10  
0.01  
0.00  
oss  
C
rss  
35  
10  
0
5
10  
15  
20  
25  
30  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
VD S - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
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