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IXFT20N80P

型号：

IXFT20N80P

描述：

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

325 K

下载PDF手册
PolarHVTMHiPerFET  
Power MOSFET  
N-Channel Enhancement Mode  
Avalanche Rated  
IXFH 20N80P  
IXFT 20N80P  
IXFV 20N80P  
IXFV 20N80PS  
VDSS = 800 V  
ID25 = 20 A  
RDS(on) ≤ 520 mΩ  
trr  
≤ 250 ns  
Fast Intrinsic Diode  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 (IXFH)  
VDSS  
VDGR  
TJ = 25° C to 150° C  
800  
800  
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
(TAB)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
TO-268 (IXFT)  
ID25  
IDM  
TC = 25° C  
20  
50  
A
A
TC = 25° C, pulse width limited by TJM  
IAR  
TC = 25° C  
10  
A
G
S
EAR  
EAS  
TC = 25° C  
TC = 25° C  
30  
mJ  
J
D (TAB)  
1.0  
PLUS220 (IXFV)  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 4 Ω  
,
10  
V/ns  
TC = 25° C  
500  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
D (TAB)  
D
S
PLUS220 SMD(IXFV..S)  
TL  
TSOLD  
Maximum lead temperature for soldering  
Plastic case for 10 s  
300  
260  
°C  
°C  
Md  
Mounting torque (TO-247)  
1.13/10 Nm/lb.in.  
G
S
FC  
Mounting force (PLUS220)  
1..65 / 2.5..15  
N/lb  
D (TAB)  
Weight  
TO-247  
TO-268  
PLUS220 types  
6
5.5  
4
g
g
g
G = Gate  
D
= Drain  
S = Source Tab = Drain  
Features  
l
Symbol  
TestConditions  
Characteristic Values  
International standard packages  
Fast recovery diode  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
l
l
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
800  
V
V
l
VDS = VGS, ID = 4 mA  
3.0  
5.0  
200  
25  
VGS  
=
30 VDC, VDS = 0  
nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
µA  
µA  
l
Easy to mount  
Space savings  
High power density  
TJ = 125° C  
1000  
l
RDS(on)  
VGS = 10 V, ID = 10 A  
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %  
520 m Ω  
l
DS99511E(03/06)  
© 2006 IXYS All rights reserved  
IXFH 20N80P IXFT 20N80P  
IXFV 20N80P IXFV 20N80PS  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ. Max.  
VDS = 20 V; ID = 10 A, pulse test  
14  
23  
S
Ciss  
Coss  
Crss  
4685  
356  
26  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
30  
24  
85  
24  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A  
RG = 2 Ω (External)  
Qg(on)  
Qgs  
86  
27  
24  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A  
Qgd  
RthJC  
RthCS  
0.25 °C/W  
°C/W  
(TO-247, PLUS220)  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ. Max.  
Symbol  
IS  
TestConditions  
VGS = 0 V  
20  
50  
A
ISM  
Repetitive  
A
V
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤300 µs, duty cycle d≤ 2 %  
trr  
IF = 25A, -di/dt = 100 A/µs  
250  
ns  
µC  
A
QRM  
IRM  
VR = 100V; VGS = 0 V  
0.8  
6.0  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6,771,478B2  
oneormoreofthefollowingU.S.patents:  
6,259,123B1  
6,306,728 B1  
IXFH 20N80P IXFT 20N80P  
IXFV 20N80P IXFV 20N80PS  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
20  
18  
16  
14  
12  
10  
8
36  
32  
28  
24  
20  
16  
12  
8
V
GS  
= 10V  
7V  
V
= 10V  
7V  
GS  
6V  
6V  
6
5V  
4
5V  
4
2
0
0
0
2
4
6
8
10  
12  
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Norm alized to ID = 10A  
)
º
C
Value vs. Junction Tem perature  
20  
18  
16  
14  
12  
10  
8
2.6  
V
= 10V  
7V  
GS  
2.4  
2.2  
2
V
= 10V  
GS  
1.8  
1.6  
1.4  
1.2  
1
6V  
I
= 20A  
D
I
= 10A  
D
6
4
0.8  
0.6  
0.4  
2
5V  
0
0
2
4
6
8
10 12 14 16 18 20 22  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Norm alized to  
ID = 10A Value vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Tem perature  
2.6  
2.4  
2.2  
2
22  
20  
18  
16  
14  
12  
10  
8
V
= 10V  
GS  
T = 125 C  
º
J
1.8  
1.6  
1.4  
1.2  
1
6
4
T = 25 C  
º
J
2
0.8  
0
0
5
10  
15  
20  
25  
30  
35  
40  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXFH 20N80P IXFT 20N80P  
IXFV 20N80P IXFV 20N80PS  
Fig. 7. Input Adm ittance  
Fig. 8. Transconductance  
40  
35  
30  
25  
20  
15  
10  
5
24  
20  
16  
12  
8
T
J
= -40 C  
º
25  
125  
º
C
º
C
T
J
= 125  
º
C
C
C
25  
º
º
-40  
4
0
0
0
5
10  
15  
20  
25  
3.5 3.75  
4
4.25 4.5 4.75  
5
5.25 5.5 5.75  
I D - Amperes  
VG S - Volts  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
60  
50  
40  
30  
20  
10  
0
V
I
= 400V  
DS  
= 10A  
D
I
= 10mA  
G
T = 125 C  
º
J
T = 25 C  
º
J
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Maxim um Transient Therm al  
Resistance  
Fig. 11. Capacitance  
10000  
1000  
100  
1.00  
0.10  
0.01  
C
iss  
C
oss  
f = 1MHz  
C
rss  
20  
10  
0
5
10  
15  
25  
30  
35  
40  
0.1  
1
10  
100  
1000  
VD S - Volts  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFH 20N80P IXFT 20N80P  
IXFV 20N80P IXFV 20N80PS  
PackageOutlineDrawings  
TO-247AD (IXFH) Outline  
TO-268 (IXFT) Outline  
1
2
3
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185  
.087  
.059  
.209  
.102  
.098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040  
.065  
.113  
.055  
.084  
.123  
C
D
E
.4  
20.80  
15.75  
.8  
21.46  
16.26  
.016  
.819  
.610  
.031  
.845  
.640  
e
L
L1  
5.20  
19.81  
5.72  
20.32  
4.50  
0.205  
.780  
0.225  
.800  
.177  
∅P  
Q
3.55  
5.89  
3.65  
6.40  
.140  
0.232  
.144  
0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170  
242 BSC  
.216  
PLUS220SMD(IXFV_S) Outline  
PLUS220 (IXFV) Outline  
© 2006 IXYS All rights reserved  
IXYSREF:F_20N80P(7J)03-01-06-A.XLS  
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