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IXFT86N30T

型号：

IXFT86N30T

描述：

海沟HiperFET功率MOSFET[ Trench HiperFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

175 K

下载PDF手册
Advance Technical Information  
TrenchTM HiperFETTM  
Power MOSFET  
VDSS = 300V  
ID25 = 86A  
RDS(on) ≤ 43mΩ  
IXFH86N30T  
IXFT86N30T  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-247 (IXFH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
300  
300  
V
V
D
D (Tab)  
S
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
TO-268 (IXFT)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
86  
A
A
190  
G
IA  
EAS  
TC = 25°C  
15  
2
A
J
S
D (Tab)  
PD  
TC = 25°C  
830  
20  
W
dV/dt  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
V/ns  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJ  
-55 to +150  
+150  
°C  
°C  
°C  
TJM  
Tstg  
-55 to +150  
Features  
TL  
1.6mm (0.063in) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z International Standard Packages  
z Avalanche Rated  
z High Current Handling Capability  
z Fast Intrinsic Rectifier  
TSOLD  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-247  
TO-268  
6.0  
4.0  
g
g
z
Low RDS(on)  
Advantages  
z
Symbol  
Test Conditions  
Characteristic Values  
Easy to Mount  
Space Savings  
High Power Density  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
300  
3.0  
Typ.  
Max.  
z
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
5.0  
Applications  
±200 nA  
z DC-DC Converters  
z Battery Chargers  
IDSS  
50 μA  
1.75 mA  
TJ = 125°C  
VGS = 10V, ID = 0.5 • ID25 , Note 1  
z Switch-Mode and Resonant-Mode  
Power Supplies  
RDS(on)  
43 mΩ  
z DC Choppers  
z AC Motor Drives  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS100208(11/09)  
IXFH86N30T  
IXFT86N30T  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXFH) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
70  
115  
S
Ciss  
Coss  
Crss  
11.3  
720  
87  
nF  
pF  
pF  
∅ P  
1
2
3
td(on)  
tr  
td(off)  
tf  
16  
18  
54  
15  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3.3Ω (External)  
e
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
Qg(on)  
Qgs  
180  
48  
nC  
nC  
nC  
3 - Source  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Dim.  
Millimeter  
Inches  
Min. Max.  
Qgd  
50  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
RthJC  
RthCS  
0.15 °C/W  
°C/W  
TO-247  
0.21  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Source-Drain Diode  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
∅P 3.55  
Q
3.65  
.140 .144  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IS  
VGS = 0V  
86  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
340  
1.5  
TO-268 (IXFT) Outline  
trr  
IRM  
QRM  
150 ns  
IF = 43A, -di/dt = 100A/μs,  
VR = 100V, VGS = 0V  
8.5  
460  
A
nC  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFH86N30T  
IXFT86N30T  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
VGS = 10V  
7V  
VGS = 10V  
7V  
6V  
5V  
6V  
5.5V  
60  
40  
20  
5V  
0
0
5
10  
15  
20  
25  
30  
150  
150  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 43A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
VGS = 10V  
6V  
5V  
I D = 86A  
I D = 43A  
0
1
2
3
4
5
6
7
8
9
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 43A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current  
vs. Case Temperature  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
-50  
-25  
0
25  
50  
75  
100  
125  
TC - Degrees Centigrade  
ID - Amperes  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFH86N30T  
IXFT86N30T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
25ºC  
125ºC  
60  
60  
40  
40  
20  
20  
0
0
3.0  
0.3  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
1.3  
40  
0
0
1
20  
40  
60  
80  
100  
120  
140  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
240  
200  
160  
120  
80  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 150V  
I D = 43A  
I G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
40  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
20  
40  
60  
80  
100  
120  
140  
160  
180  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1,000.0  
100.0  
10.0  
1.0  
= 1 MHz  
f
RDS( ) Limit  
on  
C
iss  
25µs  
C
100µs  
oss  
1ms  
TJ = 150ºC  
C
rss  
TC = 25ºC  
10ms  
Single Pulse  
100m  
0.1  
10  
10  
100  
1000  
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFH86N30T  
IXFT86N30T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
26  
24  
22  
20  
18  
16  
14  
26  
24  
22  
20  
18  
16  
14  
RG = 3.3ꢀ , VGS = 15V  
VDS = 150V  
RG = 3.3Ω , VGS = 15V  
VDS = 150V  
TJ = 125ºC  
I D = 86A  
I D = 43A  
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
40  
45  
50  
55  
60  
65  
70  
75  
80  
85  
90  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
24  
75  
70  
65  
60  
55  
50  
45  
26  
17  
17  
16  
16  
15  
15  
14  
14  
13  
t r  
t
d(on) - - - -  
t f  
t
d(off) - - - -  
25  
24  
23  
22  
21  
20  
19  
18  
22  
20  
18  
16  
14  
12  
TJ = 125ºC, VGS = 15V  
RG = 3.3ꢀ, VGS = 15V  
VDS = 150V  
VDS = 150V  
I D = 86A  
I D = 86A  
I D = 43A  
I D = 43A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
2
4
6
8
10  
RG - Ohms  
12  
14  
16  
18  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
20  
19  
18  
17  
16  
15  
14  
13  
80  
75  
70  
65  
60  
55  
50  
45  
22  
20  
18  
16  
14  
12  
10  
80  
75  
70  
65  
60  
55  
50  
t f  
t
d(off) - - - -  
t f  
t
d(off) - - - -  
RG = 3.3ꢀ, VGS = 15V  
TJ = 125ºC, VGS = 15V  
VDS = 150V  
VDS = 150V  
I D = 86A  
TJ = 125ºC  
TJ = 25ºC  
I D = 43A  
2
4
6
8
10  
12  
14  
16  
18  
40  
45  
50  
55  
60  
65  
70  
75  
80  
85  
90  
RG - Ohms  
ID - Amperes  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFH86N30T  
IXFT86N30T  
Fig. 19. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_86N30T(8W)10-21-09  
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