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IXFX170N20P

型号：

IXFX170N20P

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiperFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

142 K

下载PDF手册
Preliminary Technical Information  
PolarTM Power MOSFET  
HiperFETTM  
IXFK170N20P  
IXFX170N20P  
VDSS = 200V  
ID25 = 170A  
RDS(on) ≤ 14mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Fast Intrinsic Diode  
G
D
(TAB)  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
200  
200  
V
V
VDGR  
PLUS247 (IXFX)  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
TC = 25°C  
170  
A
ILRMS  
IDM  
Leads Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
75  
400  
A
A
(TAB)  
IA  
TC = 25°C  
TC = 25°C  
85  
4
A
J
G = Gate  
D
= Drain  
EAS  
S = Source  
TAB = Drain  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
TC = 25°C  
20  
V/ns  
W
1250  
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
• Fast intrinsic diode  
• Avalanche Rated  
• Low RDS(ON) and QG  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
• Low package inductance  
Md  
Mounting force  
Mounting torque  
(PLUS247)  
(TO-264)  
20..120/4.5..27  
N/lb.  
Nm/lb.in.  
Advantages  
1.13/10  
• Low gate charge results in simple  
drive requirement  
• High power density  
Weight  
PLUS247  
TO-264  
6
10  
g
g
Applications  
• DC-DC coverters  
• Battery chargers  
• Switched-mode and resonant-mode  
power supplies  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C, unless otherwise specified)  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ±20V, VDS = 0V  
200  
3.0  
V
• DC choppers  
• AC and DC motor control  
• Uninterrupted power supplies  
• High speed power switching  
applications  
5.0  
V
±200 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
50 μA  
1 mA  
TJ = 150°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
14 mΩ  
DS100008(7/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFK170N20P  
IXFX170N20P  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXFK) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
45  
75  
S
Ciss  
Coss  
Crss  
11.4  
2440  
70  
nF  
pF  
pF  
td(on)  
40  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
tr  
td(off)  
25  
50  
ns  
ns  
tf  
14  
ns  
Qg(on)  
Qgs  
185  
80  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
60  
RthJC  
RthCS  
0.12 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
170  
510  
1.3  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = 85A, VGS = 0V, Note 1  
PLUS 247TM (IXFX) Outline  
trr  
QRM  
IRM  
200 ns  
IF = 85A, -di/dt = 150A/μs  
1.6  
20  
μC  
A
VR = 100V, VGS = 0V  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
PRELIMINARY TECHNICAL INFORMATION  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFK170N20P  
IXFX170N20P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
180  
160  
140  
120  
100  
80  
300  
270  
240  
210  
180  
150  
120  
90  
VGS = 15V  
10V  
9V  
VGS = 15V  
10V  
9V  
8V  
8V  
60  
7V  
6V  
7V  
6V  
40  
60  
20  
30  
0
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
VDS - Volts  
0
2
4
6
8
10  
12  
14  
175  
175  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 85A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
180  
160  
140  
120  
100  
80  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 15V  
10V  
9V  
VGS = 10V  
8V  
7V  
I D = 170A  
I D = 85A  
60  
6V  
5V  
40  
20  
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0  
VDS - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 85A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
External Lead Current Limit  
VGS = 10V  
15V  
- - - -  
TJ = 175ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75 100 125 150 175 200 225 250 275  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXFK170N20P  
IXFX170N20P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
180  
160  
140  
120  
100  
80  
140  
120  
100  
80  
TJ = - 40ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
25ºC  
150ºC  
60  
60  
40  
40  
20  
20  
0
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 100V  
I D = 85A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5  
VSD - Volts  
0
20  
40  
60  
80  
100 120 140 160 180 200  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1,000.0  
100.0  
10.0  
1.0  
RDS(on) Limit  
C
iss  
25µs  
100µs  
C
oss  
1ms  
10ms  
TJ = 175ºC  
100ms  
DC  
TC = 25ºC  
Single Pulse  
C
rss  
= 1 MHz  
5
f
10  
0.1  
0
10  
15  
20  
25  
30  
35  
40  
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFK170N20P  
IXFX170N20P  
Fig. 13. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: T_170N20P(93)7-16-08  
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